PMEG2010AEB Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2010AEB 20 V, 1 A ultra low V MEGA F Schottky barrier rectifier in SOD523 package Product data sheet 2003 Dec 03NXP Semiconductors Product data sheet 20 V, 1 A ultra low V MEGA Schottky F PMEG2010AEB barrier rectifier in SOD523 package FEATURES QUICK REFERENCE DATA Forward current: 1.0 A SYMBOL PARAMETER MAX. UNIT Reverse voltage: 20 V I forward current 1 A F Ultra low forward voltage V reverse voltage 20 V R Ultra small SMD package. PINNING APPLICATIONS PIN DESCRIPTION Low voltage rectification 1 cathode High efficiency DC/DC conversion 2 anode Voltage clamping Inverse-polarity protection Low power consumption applications. 1 2 DESCRIPTION Top view col001 Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra Marking code: L6. small plastic SMD package. The marking bar indicates the cathode. Fig.1 Simplified outline (SOD523 SC-79) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMEG2010AEB plastic surface mounted package 2 leads SOD523 RELATED PRODUCTS TYPE DESCRIPTION FEATURE PMEG2005EB 0.5 A 20 V very low V MEGA Schottky rectifier Lower I in same package F R PMEG2010EA 1 A 20 V very low V MEGA Schottky rectifier Lower forward current, lower I SOD323 F R (SC76) 2003 Dec 03 2