PD-90423D IRFF110 JANTX2N6782 JANTXV2N6782 REPETITIVE AVALANCHE AND dv/dt RATED 100V, N-CHANNEL REF: MIL-PRF-19500/556 HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) I D IRFF110 100V 0.60 3.5A TO-39 Description Features Repetitive Avalanche Ratings The HEXFET technology is the key to International Dynamic dv/dt Rating Rectifiers HiRel advanced line of power MOSFET transistors. Hermetically Sealed The efficient geometry and unique processing of this latest Simple Drive Requirements State of the Art design achieves: very low on state ESD Rating: Class 1A per MIL-STD-750, resistance combined with high trans conductance. Method 1020 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol Value Parameter Units I V = 10V, T = 25C Continuous Drain Current 3.5 D1 GS C A I V = 10V, T = 100C Continuous Drain Current 2.25 D2 GS C I T = 25C Pulsed Drain Current 14 DM C W P T = 25C Maximum Power Dissipation 15 D C W/C Linear Derating Factor 0.12 V V Gate-to-Source Voltage 20 GS E Single Pulse Avalanche Energy 68 mJ AS A I Avalanche Current 3.5 AR E Repetitive Avalanche Energy 1.5 mJ AR V/ns dv/dt Peak Diode Recovery dv/dt 5.5 T Operating Junction and J -55 to + 150 T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) g Weight 0.98 (Typical) For Footnotes, refer to the page 2. 1 2018-12-04 International Rectifier HiRel Products, Inc. IRFF110 JANTX2N6782/JANTXV2N6782 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 1.0mA DSS GS D BV /T Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 1.0mA DSS J D 0.60 V = 10V, I = 2.25A GS D2 R Static Drain-to-Source On-Resistance DS(on) 0.61 V = 10V, I = 3.5A GS D1 V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D Gfs Forward Transconductance 0.8 S V = 15V, I = 2.25A DS D2 I 25 V = 80 V, V = 0V DSS DS GS Zero Gate Voltage Drain Current A 250 V = 80V,V = 0V,T =125C DS GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA Gate-to-Source Leakage Reverse -100 V = -20V GS Q Total Gate Charge 8.1 I = 3.5A G D1 Q Gate-to-Source Charge 1.7 nC V = 50V GS DS Q Gate-to-Drain (Miller) Charge 4.5 V = 10V GD GS t Turn-On Delay Time 15 V = 50V d(on) DD tr Rise Time 25 I = 3.5A D1 ns t Turn-Off Delay Time 25 R = 7.5 d(off) G V = 10V t Fall Time 20 f GS Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 in from package) with Source wire Ls +L Total Inductance 7.0 nH D internally bonded from Source pin to Drain pin C Input Capacitance 180 V = 0V iss GS C Output Capacitance 82 pF V = 25V oss DS C Reverse Transfer Capacitance 15 = 1.0MHz rss Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions I Continuous Source Current (Body Diode) 3.5 S A I Pulsed Source Current (Body Diode) 14 SM V Diode Forward Voltage 1.5 V T = 25C,I = 3.5A, V = 0V SD J S GS t Reverse Recovery Time 180 ns T = 25C, I = 3.5A, V 50V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 2.0 C rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Thermal Resistance Symbol Parameter Min. Typ. Max. Units Junction-to-Case 8.33 R JC C/W R Junction-to-Ambient (Typical Socket Mount) 175 JA Footnotes: Repetitive Rating Pulse width limited by maximum junction temperature. V = 25V, starting T = 25C, Peak I = 3.5A DD J L I 3.5A, di/dt 75A/s, V 100V, T 150C, Suggested R = 7.5 SD DD J G Pulse width 300 s Duty Cycle 2% 2 2018-12-04 International Rectifier HiRel Products, Inc.