PMEG2010EH Nexperia

PMEG2010EH PMEG2010EJ PMEG2010ET 1 A very low V MEGA Schottky barrier rectiers F Rev. 04 20 March 2007 Product data sheet 1. Product prole 1.1 General description Planar Maximum Efciency General Application (MEGA) Schottky barrier rectiers with an integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Conguration NXP JEITA JEDEC PMEG2010EH SOD123F - - single PMEG2010EJ SOD323F SC-90 - single PMEG2010ET SOT23 - TO-236AB single 1.2 Features n Forward current: I 1A F n Reverse voltage: V 20 V R n Very low forward voltage n Small SMD plastic packages 1.3 Applications n Low voltage rectication n High efciency DC-to-DC conversion n Switch mode power supply n Reverse polarity protection n Low power consumption applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current T 55 C --1 A F sp V reverse voltage - - 20 V R 1 V forward voltage I = 1000 mA - 420 500 mV F F 1 Pulse test: t 300 s 0.02. pPMEG2010EH/EJ/ET NXP Semiconductors 1 A very low V MEGA Schottky barrier rectiers F 2. Pinning information Table 3. Pinning Pin Description Simplied outline Symbol SOD123F SOD323F 1 1 cathode 12 2 anode 12 sym001 001aab540 SOT23 1 anode 3 3 2 n.c. 2 3 cathode 1 n.c. 12 006aaa436 1 The marking bar indicates the cathode. 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PMEG2010EH - plastic surface-mounted package 2 leads SOD123F PMEG2010EJ SC-90 plastic surface-mounted package 2 leads SOD323F PMEG2010ET - plastic surface-mounted package 3 leads SOT23 4. Marking Table 5. Marking codes 1 Type number Marking code PMEG2010EH A9 PMEG2010EJ AH PMEG2010ET *AU 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMEG2010EH EJ ET 4 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 20 March 2007 2 of 11