PMEG4005AEA,115 Nexperia

PMEG4005AEA Very low VF MEGA Schottky barrier rectifier 29 May 2019 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. 2. Features and benefits Very low forward voltage High surge current Very small plastic SMD package AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC/DC conversion Voltage clamping Inverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage T = 25 C - - 40 V R j V forward voltage I = 500 mA 1 - 420 470 mV F F I reverse current V = 40 V 1 - 30 100 A R R 1 Pulsed test: t 300 s 0.02 p 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 1 2 K A 2 A anode sym001 SOD323 1 The marking bar indicates the cathode.Nexperia PMEG4005AEA Very low VF MEGA Schottky barrier rectifier 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG4005AEA SOD323 plastic, surface-mounted package 2 leads 1.3 mm pitch 1.7 SOD323 mm x 1.25 mm x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code PMEG4005AEA E3 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 40 V R j I forward current - 0.5 A F I repetitive peak forward t 1 ms 0.5 - 3.5 A FRM p current I non-repetitive peak t = 8 ms square wave - 10 A FSM p forward current T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air 1 2 - - 450 K/W th(j-a) junction to ambient 1 3 - - 210 K/W R thermal resistance from 1 4 - - 90 K/W th(j-sp) junction to solder point 1 For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P are a R significant part of the total power losses. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 3 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 4 Soldering point of cathode tab. PMEG4005AEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 29 May 2019 2 / 8