PMH550UPEH Nexperia

PMH550UPE 20 V, P-channel Trench MOSFET 8 April 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection up to 1.8 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 0.62 0.37 mm 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -0.8 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -0.6 A T = 25 C - 550 640 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia PMH550UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 1 2 S source 3 D drain G 3 Transparent top view S DFN0606-3 (SOT8001) 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMH550UPE DFN0606-3 plastic, leadless ultra small package 3 terminals body 0.62 x SOT8001 0.62 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMH550UPE 0001 1000 reading direction pin 1 indication marking code reading example: (example) 1011 1101 reading direction aaa-029459 Fig. 1. DFN0606-3 (SOT8001) binary marking code description PMH550UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 8 April 2020 2 / 14