PMN100EPAX Nexperia

PMN100EPA 60 V, P-channel Trench MOSFET 16 April 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range T = 175 C j Very fast switching Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C 1 - - -2.5 A D GS amb Static characteristics R drain-source on-state V = -10 V I = -2.5 A T = 25 C - 100 130 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMN100EPA 60 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 1 D drain D 2 D drain G 3 G gate 1 2 3 4 S source S SC-74 TSOP6 (SOT457) 5 D drain 017aaa094 6 D drain 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN100EPA SC-74 TSOP6 plastic, surface-mounted package (SC-74 TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN100EPA 3R PMN100EPA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 16 April 2020 2 / 15