PMN40SNAX Nexperia

PMN40SNA 60 V, N-channel Trench MOSFET 8 April 2021 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Extended temperature range T = 175 C j Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 4.7 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 4.7 A T = 25 C - 29 36 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMN40SNA 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 1 D drain D 2 D drain G 3 G gate 1 2 3 4 S source mbb076 S SC-74 TSOP6 (SOT457) 5 D drain 6 D drain 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN40SNA SC-74 TSOP6 plastic, surface-mounted package (SC-74 TSOP6) 6 SOT457 leads 7. Marking Table 4. Marking codes Type number Marking code PMN40SNA H6 PMN40SNA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 8 April 2021 2 / 15