PMPB08R4VPX Nexperia

PMPB08R4VP 12 V, P-channel Trench MOSFET 13 October 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 3. Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -12 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -16.7 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -12 A T = 25 C - 8.4 9.6 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm.Nexperia PMPB08R4VP 12 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 1 6 2 D drain 7 2 5 G 3 G gate 3 4 8 4 S source S 5 D drain Transparent top view 017aaa094 6 D drain DFN2020M-6 (SOT1220-2) 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB08R4VP DFN2020M-6 plastic thermal enhanced ultra thin small outline package no SOT1220-2 leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code ZD PMPB08R4VP PMPB08R4VP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 13 October 2020 2 / 15