PNE20010EXD 200 V, 1 A hyperfast recovery rectifier 1 April 2022 Product data sheet 1. General description High power density, hyperfast recovery rectifier with high-efficiency planar technology, encapsulated in a CFP2-HP (SOD323HP) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Reverse voltage: V 200 V R Forward current: I 1 A F Hyperfast recovery time: t 25 ns rr Planar die design with Pt doped life time control Low inductance Small and flat lead SMD plastic package, typical height 0.68 mm High power capability due to clip-bond technology 3. Applications General-purpose rectification Reverse polarity protection Hyperfast switching Freewheeling applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz square wave T - - 1 A F(AV) sp current 170 C V reverse voltage T = 25 C - - 200 V R j V forward voltage I = 1 A pulsed T = 25 C - 880 1020 mV F F j I reverse current V = 200 V pulsed T = 25 C - - 75 nA R R j V = 200 V pulsed T = 125 C - 0.6 5 A R jNexperia PNE20010EXD 200 V, 1 A hyperfast recovery rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 2 2 A anode K A 006aab040 Transparent top view CFP2-HP (SOD323HP) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PNE20010EXD CFP2-HP SOD323HP: plastic surface-mounted package with SOD323HP solderable lead ends 2.2 mm x 1.3 mm x 0.68 mm body 7. Marking Table 4. Marking codes Type number Marking code 2K PNE20010EXD 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 200 V R j I forward current = 1 T 169 C - 1.4 A F sp I average forward current = 0.5 f = 20 kHz square wave T - 1 A F(AV) sp 170 C I non-repetitive peak t = 8.3 ms single half sine wave (applied - 25 A FSM p forward current at reated load condition) T = 25 C j(init) P total power dissipation T 25 C 1 - 0.65 W tot amb 2 - 1.2 W T junction temperature - 175 C j T ambient temperature -55 175 C amb T storage temperature -65 175 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . PNE20010EXD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2022. All rights reserved Product data sheet 1 April 2022 2 / 13