PSMN1R0-40SSH N-channel 40 V, 1 m, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 1 May 2019 Product data sheet 1. General description 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current. 2. Features and benefits 325 Amp continuous current capability LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection Copper-clip and solder die attach for low package inductance and resistance, and high I (max) D rating Ideal replacement for D2PAK and 10 x 12 mm leadless package types Qualified to 175 C Meets UL2595 requirements for creepage and clearance Avalanche rated, 100 % tested Low Q , Q and Q for high efficiency, especially at higher switching frequencies G GD OSS Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs Unique SchottkyPlus technology for Schottky-like switching performance and low I leakage DSS Narrow V rating for easy paralleling and improved current sharing GS(th) Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions 3. Applications Brushless DC motor control Synchronous rectifier in high-power AC-DC applications, e.g. server power supplies Battery protection eFuse and load switch Hotswap / in-rush current management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 325 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 375 W tot mbNexperia PSMN1R0-40SSH N-channel 40 V, 1 m, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from Fig. 5 - 0.35 0.4 K/W th(j-mb) junction to mounting base Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 0.62 0.88 1 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q total gate charge I = 25 A V = 32 V V = 10 V - 98 137 nC G(tot) D DS GS Fig. 13 Fig. 14 Q gate-drain charge - 17 34 nC GD Source-drain diode Q recovered charge I = 25 A dI /dt = -100 A/s V = 0 V 2 - 49 - nC r S S GS V = 20 V Fig. 17 DS 1 325A. Continuous current has been successfully demonstrated during application test. Practically, the current will be limited by PCB, thermal design and operating temperature. 2 includes capacitive recovery 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 S source G 3 S source 4 S source mbb076 S mb D mounting base connected to drain 1 2 3 4 LFPAK88 (SOT1235) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R0-40SSH LFPAK88 plastic, single-ended surface-mounted package (LFPAK88) 4 SOT1235 leads 2 mm pitch 8 mm x 8 mm x 1.6 mm body 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V peak drain-source t 20 ns f 500 kHz E 200 nJ - 45 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 375 W tot mb PSMN1R0-40SSH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 1 May 2019 2 / 13