PSMN1R8-30MLHX Nexperia

PSMN1R8-30MLH N-channel 30 V, 2.1 m, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low R , low I leakage and high efficiency. Rated to 150 A DSon DSS and optimizedwith low gate resistance (R ) for fast-switching applications. G 2. Features and benefits Optimized for low R and low gate resistance (R ) DSon G Fast switching reduced switching losses Strong linear-mode (SOA) rating Low leakage < 1 A at 25 C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive 150 A continuous I rating D(max) High reliability copper-clip bonded and solder die attach LFPAK33 package Qualified to 175 C Exposed leads for optimal visual solder inspection 3. Applications Synchronous buck regulator Synchronous rectifier in AC-DC and DC-DC applications BLDC (brushless) motor control eFuse and battery protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 150 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 106 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.76 2.1 m DSon GS D j resistance Fig. 10 V = 4.5 V I = 25 A T = 25 C - 2.4 2.9 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 15 V V = 4.5 V 1 5.6 11.2 nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge 7.7 17 28 nC G(tot)Nexperia PSMN1R8-30MLH N-channel 30 V, 2.1 m, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Symbol Parameter Conditions Min Typ Max Unit Source-drain diode S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.87 - S S GS V = 15 V Fig. 16 DS 1 150A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D Mounting base connected to drain 1 2 3 4 LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R8-30MLH LFPAK33 Plastic, single ended surface mounted package (LFPAK33) 8 SOT1210 leads 0.65 mm pitch 7. Marking Table 4. Marking codes Type number Marking code PSMN1R8-30MLH 1H830L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 30 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 106 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 150 A D GS mb V = 10 V T = 100 C Fig. 2 - 110 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 624 A DM p mb T storage temperature -55 175 C stg PSMN1R8-30MLH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 30 September 2019 2 / 12