PSMN2R0-55YLH N-channel 55 V, 2.2 mOhm, 200 A continuous, logic level MOSFET in LFPAK56E using NextPower-S3 technology 9 July 2021 Product data sheet 1. General description 200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperias unique SchottkyPlus technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe and reliable switching at high load-current. 2. Features and benefits 200 A continuous current capability Optimised for 36 V (nominal) battery powered applications LFPAK56E low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection Copper-clip and solder die attach for low package inductance and resistance, and high I D (max) rating Qualified to 175 C Avalanche rated, 100% tested Low Q , Q and Q for high efficiency, especially at higher switching frequencies G GD OSS Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs Unique SchottkyPlus technology for Schottky-like switching performance and low I leakage DSS Narrow V rating for easy paralleling and improved current sharing GS(th) Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions 3. Applications Brushless DC motor control Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies Battery protection and Battery Management Systems (BMS) Load switch 10 cell lithium-ion battery applications (36 V 42 V) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 55 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 200 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 333 W tot mb T junction temperature -55 - 175 C jNexperia PSMN2R0-55YLH N-channel 55 V, 2.2 mOhm, 200 A continuous, logic level MOSFET in LFPAK56E using NextPower-S3 technology Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.63 2.1 m DSon GS D j resistance Fig. 10 V = 4.5 V I = 25 A T = 25 C - 1.83 2.4 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 27 V V = 4.5 V - 14 31 nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge - 54 84 nC G(tot) 1 200A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source 2 S source D 3 S source 4 G gate G mb D mounting base connected to drain mbb076 S 1 2 3 4 LFPAK56E Power- SO8 (SOT1023) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-55YLH LFPAK56E plastic, single-ended surface-mounted package SOT1023 Power-SO8 (LFPAK56) 4 leads 1.27 mm pitch 7. Marking Table 4. Marking codes Type number Marking code 2H055L PSMN2R0-55YLH 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 55 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 55 V DGR j GS PSMN2R0-55YLH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 9 July 2021 2 / 12