PSMN3R2-40YLD N-channel 40 V, 3.3 m, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 26 August 2019 Product data sheet 1. General description 120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits 120 A continuous I rating D(max) Avalanche rated, 100% tested at I = 120 A AS Strong SOA (linear-mode) rating NextPower-S3 technology delivers superfast switching with soft body-diode recovery Low Q , Q and Q for high system efficiency and low EMI designs RR G GD Schottky-Plus body-diode with low V , low Q , soft recovery and low I leakage SD RR DSS Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance 3. Applications High-performance synchronous rectification DC-to-DC converters Brushless DC motor control Battery protection Load-switch and eFuse 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 115 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 3.6 4.2 m DSon GS D j resistance Fig. 10 V = 10 V I = 25 A T = 25 C - 2.9 3.3 m GS D j Fig. 10Nexperia PSMN3R2-40YLD N-channel 40 V, 3.3 m, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q total gate charge I = 25 A V = 20 V V = 4.5 V 12 18 26 nC G(tot) D DS GS Fig. 12 Fig. 13 Q gate-drain charge 1.3 4.3 8.6 nC GD 1 120A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected 1 2 3 4 to drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R2-40YLD LFPAK56 plastic, single-ended surface-mounted package 4 terminals SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code PSMN3R2-40YLD 3D2L40Y 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V peak drain-source t 20 ns f 500 kHz E 200 nJ - 45 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 115 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 120 A D GS mb V = 10 V T = 100 C Fig. 2 - 95 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 537 A DM p mb PSMN3R2-40YLD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 26 August 2019 2 / 13