PSMN8R5-40MLD N-channel 40 V, 8.5 m, logic level MOSFET in LFPAK33 using NextPower-S3 technology 10 February 2020 Product data sheet 1. General description 60 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits Avalanche rated, 100% tested NextPower-S3 technology delivers superfast switching with soft body-diode recovery Low Q , Q and Q for high system efficiency, especially at high switching frequencies RR G GD Low spiking and ringing for low EMI designs High reliability clip bonded and solder die attach Mini Power SO8 package no glue, no wire bonds, qualified to 175 C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance 3. Applications Secondary side synchronous rectification DC-to-DC converters Brushless DC motor drive LED lighting 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 60 A D GS mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 15 A T = 25 C - 7.2 8.5 m DSon GS D j resistance Fig. 10 V = 4.5 V I = 15 A T = 25 C - 9 11 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge I = 15 A V = 20 V V = 4.5 V 0.6 2.1 4.2 nC GD D DS GS Fig. 12 Fig. 13Nexperia PSMN8R5-40MLD N-channel 40 V, 8.5 m, logic level MOSFET in LFPAK33 using NextPower-S3 technology Symbol Parameter Conditions Min Typ Max Unit Q total gate charge I = 15 A V = 20 V V = 10 V 12 19 27 nC G(tot) D DS GS Fig. 12 Fig. 13 1 60A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D Mounting base connected to drain 1 2 3 4 LFPAK33 (SOT1210) 6. Marking Table 3. Marking codes Type number Marking code PSMN8R5-40MLD 8D5L40 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V peak drain-source t 20 ns f 500 kHz E 200 nJ - 45 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 59 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 60 A D GS mb V = 10 V T = 100 C Fig. 2 - 42 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 239 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering - 260 C sld(M) temperature Source-drain diode I source current T = 25 C - 59 A S mb I peak source current pulsed t 10 s T = 25 C - 239 A SM p mb PSMN8R5-40MLD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 10 February 2020 2 / 12