PSMNR60-25YLH N-channel 25 V, 0.7 m, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low R . Low I leakage even when hot, high efficiency and high current. Rated to 300 A, DSon DSS optimized for DC load switch and hot-swap applications. 2. Features and benefits 100% avalanche tested at I = 190 A (AS) Optimized for low R DSon Low leakage < 1 A at 25 C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive Copper-clip for low parasitic inductance and resistance High reliability LFPAK package, qualified to 175 C Wave solderable exposed leads for optimal solder coverage and visual solder inspection 3. Applications Hot swap e-Fuse Power OR-ing DC switch / Load switch Battery protection Brushed and BLDC (brushless) motor control Synchronous rectification in AC-DC and DC-DC applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 300 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 268 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 0.59 0.7 m DSon GS D j resistance Fig. 10 V = 4.5 V I = 25 A T = 25 C - 0.82 1.02 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 12 V V = 4.5 V 2.7 15 30 nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge 19 43 71 nC G(tot)Nexperia PSMNR60-25YLH N-channel 25 V, 0.7 m, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Symbol Parameter Conditions Min Typ Max Unit Source-drain diode S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 1 - S S GS V = 12 V Fig. 16 DS 1 300A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected 1 2 3 4 to drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMNR60-25YLH LFPAK56 plastic, single-ended surface-mounted package 4 terminals SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code PSMNR60-25YLH H6025L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 25 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 25 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 268 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 300 A D GS mb V = 10 V T = 100 C Fig. 2 - 300 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 1758 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j PSMNR60-25YLH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 30 September 2019 2 / 13