NJG1117HA8-TE1 Nisshinbo

NJG1117HA8 GPS LOW NOISE AMPLIFIER GaAs MMIC Q GENERAL DESCRIPTION Q PACKAGE OUTLINE This IC is a Low noise amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier can be tuned to wide frequency point (1.5GHz~2.4GHz). An ultra-small and ultra-thin package of USB6-A8 is adopted. NJG1117HA8 Q FEATURES O Low voltage operation +2.7V typ. O Low current consumption 3.0mA typ. O High small signal gain 19.5dB typ. f=1.575GHz O Low noise figure 0.7dB typ. f=1.575GHz O Input power at 1dB gain compression point -16.5 dBm typ. f=1.575GHz O High input IP3 -2.0dBm typ. f=1.575GHz+1.5751GHz O Ultra-small & ultra-thin package USB6-A8 (Package size: 1.0x1.2x0.38mm) Q PIN CONFIGURATION HA8 Type (Top View) GND 3 RFIN GND Pin connection 4 2 1. RFOUT 2. GND 3. GND 4. RFIN Bias 5. GND Circuit 6. GND GND RFOUT 5 1 6 GND 1Pin INDEX Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2007-06-22 - 1 - NJG1117HA8 Q ABSOLUTE MAXIMUM RATINGS T =+25C, Z =Z =50 ohm a s l PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V 5.0 V DD Input power Pin V=2.7V +15 dBm DD Power dissipation P On PCB board, Tjmax=150C 150 mW D Operating temperature T -40~+85 C opr Storage temperature T -55~+150 C stg Q ELECTRICAL CHARACTERISTICS GENERAL CONDITIONS: V =2.7V, f =1575MHz, T =+25C, Z =Z =50 ohm, with application circuit. DD RF a s l PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq 1.57 1.575 1.58 GHz Operating voltage V 2.5 2.7 3.6 V DD Operating current1 I RF OFF - 3.0 4.0 mA DD Small signal gain Gain 17.5 19.5 22.0 dB Exclude PCB & connector Noise figure NF - 0.7 1.0 dB losses (IN: 0.05dB) Input power at 1dB gain P -19.0 -16.5 - dBm -1dB(IN) compression point Input 3rd order f1=f , f2=f +100kHz, RF RF IIP3 -8.0 -2.0 - dBm intercept point Pin=-34dBm RF IN VSWR VSWRi - 2.0 2.5 RF OUT VSWR VSWRo - 1.5 2.0 - 2 -