X-On Electronics has gained recognition as a prominent supplier of NJG1117HA8-TE1 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. NJG1117HA8-TE1 RF Amplifier are a product manufactured by Nisshinbo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

NJG1117HA8-TE1 Nisshinbo

NJG1117HA8-TE1 electronic component of Nisshinbo
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See Product Specifications
Part No. NJG1117HA8-TE1
Manufacturer: Nisshinbo
Category: RF Amplifier
Description: RF Amplifier GPS LNA GaAs MMIC
Datasheet: NJG1117HA8-TE1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.6554 ea
Line Total: USD 1966.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 15 Apr to Thu. 17 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.6554

   
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We are delighted to provide the NJG1117HA8-TE1 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJG1117HA8-TE1 and other electronic components in the RF Amplifier category and beyond.

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NJG1117HA8 GPS LOW NOISE AMPLIFIER GaAs MMIC Q GENERAL DESCRIPTION Q PACKAGE OUTLINE This IC is a Low noise amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier can be tuned to wide frequency point (1.5GHz~2.4GHz). An ultra-small and ultra-thin package of USB6-A8 is adopted. NJG1117HA8 Q FEATURES O Low voltage operation +2.7V typ. O Low current consumption 3.0mA typ. O High small signal gain 19.5dB typ. f=1.575GHz O Low noise figure 0.7dB typ. f=1.575GHz O Input power at 1dB gain compression point -16.5 dBm typ. f=1.575GHz O High input IP3 -2.0dBm typ. f=1.575GHz+1.5751GHz O Ultra-small & ultra-thin package USB6-A8 (Package size: 1.0x1.2x0.38mm) Q PIN CONFIGURATION HA8 Type (Top View) GND 3 RFIN GND Pin connection 4 2 1. RFOUT 2. GND 3. GND 4. RFIN Bias 5. GND Circuit 6. GND GND RFOUT 5 1 6 GND 1Pin INDEX Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2007-06-22 - 1 - NJG1117HA8 Q ABSOLUTE MAXIMUM RATINGS T =+25C, Z =Z =50 ohm a s l PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V 5.0 V DD Input power Pin V=2.7V +15 dBm DD Power dissipation P On PCB board, Tjmax=150C 150 mW D Operating temperature T -40~+85 C opr Storage temperature T -55~+150 C stg Q ELECTRICAL CHARACTERISTICS GENERAL CONDITIONS: V =2.7V, f =1575MHz, T =+25C, Z =Z =50 ohm, with application circuit. DD RF a s l PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq 1.57 1.575 1.58 GHz Operating voltage V 2.5 2.7 3.6 V DD Operating current1 I RF OFF - 3.0 4.0 mA DD Small signal gain Gain 17.5 19.5 22.0 dB Exclude PCB & connector Noise figure NF - 0.7 1.0 dB losses (IN: 0.05dB) Input power at 1dB gain P -19.0 -16.5 - dBm -1dB(IN) compression point Input 3rd order f1=f , f2=f +100kHz, RF RF IIP3 -8.0 -2.0 - dBm intercept point Pin=-34dBm RF IN VSWR VSWRi - 2.0 2.5 RF OUT VSWR VSWRo - 1.5 2.0 - 2 -

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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