X-On Electronics has gained recognition as a prominent supplier of NJG1809ME7-TE1 RF Switch ICs across the USA, India, Europe, Australia, and various other global locations. NJG1809ME7-TE1 RF Switch ICs are a product manufactured by Nisshinbo. We provide cost-effective solutions for RF Switch ICs, ensuring timely deliveries around the world.

NJG1809ME7-TE1 Nisshinbo

NJG1809ME7-TE1 electronic component of Nisshinbo
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See Product Specifications
Part No.NJG1809ME7-TE1
Manufacturer: Nisshinbo
Category: RF Switch ICs
Description: RF Switch ICs HP SP4T Switch GaAs 1.35 to 5.0V 32dBm
Datasheet: NJG1809ME7-TE1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.628 ea
Line Total: USD 1.63 
Availability - 1820
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1820
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 1.628
10 : USD 1.298
100 : USD 1.133
250 : USD 1.0945
500 : USD 1.0296
1000 : USD 1.0296

   
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We are delighted to provide the NJG1809ME7-TE1 from our RF Switch ICs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJG1809ME7-TE1 and other electronic components in the RF Switch ICs category and beyond.

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NJG1809ME7 HIGH POWER SP4T SWITCH GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE The NJG1809ME7 is a high power SP4T switch MMIC suitable for LTE-U / LAA, WLAN, and LTE applications. This switch features very low insertion loss and high isolation up to 6GHz and excellent linearity performance with 1.8V control voltage. This switch achieves high speed switching time for WLAN application. NJG1809ME7 Integrated ESD protection device on each port achieves excellent ESD robustness. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. The small and thin EQFN18-E7 package is adopted. APPLICATIONS LTE-U / LAA, WLAN (802.11a/b/g/n/ac), LTE multi-mode applications General purpose switching applications FEATURES Low voltage logic control 1.35 to 5.0V Low insertion loss 0.40dB typ. f=2.7GHz, 3.5GHz, P =+27dBm IN 0.50dB typ. f=5.85GHz, P =+27dBm IN High isolation 27dB typ. f=2.7GHz, P =+27dBm IN 25dB typ. f=3.5GHz, P =+27dBm IN 30dB typ. f= 5.85GHz, P =+27dBm IN P +32dBm min. -0.1dB High speed switching time 250ns typ. Small and thin package EQFN18-E7 (2.0x2.0x0.397mm typ.) RoHS compliant and Halogen Free, MSL1 PIN CONFIGURATION (TOP VIEW) GND VCTL1 VCTL2 VDD GND Pin connection 14 13 12 11 10 1. GND 10. GND 15 9 GND GND 2. GND 11. VDD DECODER 3. PC 12. VCTL2 P4 16 8 P2 4. GND 13. VCTL1 5. GND 14. GND GND GND 17 7 6. P1 15. GND 7. GND 16. P4 P3 18 6 P1 8. P2 17. GND 9. GND 18. P3 2 3 4 1 5 Exposed PAD: GND GND GND PC GND GND TRUTH TABLE H =V , L =V CTL(H) CTL(L) VCTL1 VCTL2 Path L L PC-P1 H L PC-P2 L H PC-P3 H H PC-P4 NOTE: Please note that any information on this datasheet will be subject to change. Ver.2017-08-08 - 1 - NJG1809ME7 ABSOLUTE MAXIMUM RATINGS (T =+25C, Z =Z =50) a s l PARAMETER SYMBOL CONDITIONS RATINGS UNITS RF Input Power P V =2.75V, V =0/1.8V +33 dBm IN DD CTL Supply Voltage V VDD terminal 5.0 V DD Control Voltage V VCTL1, VCTL2 terminal 5.0 V CTL Four-layer FR4 PCB with through-hole Power Dissipation P 1400 mW D (101.5x114.5mm), T =150C j Operating Temp. T -40 to +105 C opr Storage Temp. T -55 to +150 C stg ELECTRICAL CHARACTERISTICS 1 (DC) (General conditions: T =+25C, V =2.75V, V =1.8V, V =0V, with application circuit) a DD CTL(H) CTL(L) PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage V VDD Terminal 2.5 2.75 5.0 V DD Operating Current I No RF input - 350 700 A DD Control Voltage (LOW) V VCTL1, VCTL2 Terminal 0 - 0.45 V CTL(L) Control Voltage (HIGH) V VCTL1, VCTL2 Terminal 1.35 1.8 5.0 V CTL(H) Control Current I V =1.8V - 4 10 A CTL CTL(H) - 2 -

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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