Silicon SPDT HMIC PIN Diode Switch 50 MHz - 20 GHz MASW-002103 Rev. V12 Functional Schematic Features Broad Bandwidth Specified 50 MHz - 20 GHz Usable up to 26 GHz J3 Low Insertion Loss High Isolation Low Parasitic Capacitance & Inductance Silicon Nitride Passivation Fully Monolithic, Glass Encapsulated Chip J1 Up to 38 dBm CW Power Handling +25C RoHS* Compliant Applications Aerospace & Defense J2 ISM Description Pin Configuration The MASW-002103-1363 is a SPDT, surmount, broadband, monolithic switch using two sets of Pin Function series and shunt connected PIN diodes. This device is designed for use in broadband, low to moderate J1 RFC signal, high performance, switch applications up to 20 GHz. It is a surface mountable switch configured J2 RF1 for optimized performance and offers a distinct advantage over MMIC, beamlead and chip and wire J3 RF2 hybrid designs. Because the PIN diodes of the MASW-002103-1363 are integrated into the chip and kept within close proximity, the parasitics typically associated with other designs that use Ordering Information individual components are kept to a minimum. To minimize the parasitics and achieve high Part Number Package performance the MASW-002103-1363 is fabricated using MACOMs HMIC (Heterolithic Microwave MASW-002103-13630G 50 piece gel pack Integrated Circuit) process. This process allows the silicon pedestals, which form the series and shunt MASW-002103-13635P 500 piece reel diodes or vias, to be imbeded in low loss, low dispersion glass. The combination of low loss glass MASW-002103-13630P 3000 piece reel and using tight spacing between elements results in an HMIC device with low loss and high isolation MASW-002103-001SMB Sample Test Board through low millimeter wave frequencies. Demo Board with MASW-002103-002SMB The topside is fully encapsulated with silicon nitride MABT-011000 Bias Network and also has an additional layer of polymer for scratch and impact protection. The protective coating guards against damage to the junction and the anode airbridges during handling and assembly. On the backside of the chip gold metalized pads have been added to produce a solderable surmount device. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Silicon SPDT HMIC PIN Diode Switch 50 MHz - 20 GHz MASW-002103 Rev. V12 Electrical Specifications: T = 25C, P = 0 dBm, Z = 50 , 20 mA/-10 V A IN 0 Parameter Frequency Units Min. Typ. Max. 6 GHz 0.55 0.65 Insertion Loss 13 GHz dB 0.80 0.95 20 GHz 1.05 1.25 6 GHz 38 52 Input to Output Isolation 13 GHz dB 28 38 20 GHz 23 27 6 GHz 20 25 Return Loss 13 GHz dB 17.3 23 20 GHz 16.5 23 Input 0.1dB Compression Point 2 GHz dBm 36 0.05 GHz, 5 MHz Spacing, 10 dBm 45 0.5 GHz, 5 MHz Spacing ,20 dBm 59 IIP3 dBm 1 GHz, 10 MHz Spacing, 20 dBm 63 2 GHz, 10 MHz Spacing, 20 dBm 66 1 Switching Speed ns 75 2 Voltage Rating V 80 1. Typical Switching speed measured from (50% Control - 90% RF Voltage), in commutating mode at 10 kHz repetition rate, using the MACOM MADR- 011022 Driver at -10 V -20 mA and +5 V +20 mA. 2. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 A maximum -80 volts. 3,4,5 Handling Procedures Absolute Maximum Ratings Please observe the following precautions to avoid damage: 38 dBm CW 2 GHz RF CW Incident Power Static Sensitivity 33 dBm CW 20 GHz These electronic devices are sensitive to DC Reverse Voltage 80 V electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques Bias Current should be used when handling these HBM class 1A +25C 50 mA +85C 20 mA devices. Junction Temperature +175C Operating Temperature -65C to +125C Storage Temperature -65C to +150C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Maximum operating conditions for a combination of RF power, DC bias and temperature: +33 dBm CW 20 mA (per diode) +85C. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: