X-On Electronics has gained recognition as a prominent supplier of 1N5400 across the USA, India, Europe, Australia, and various other global locations. 1N5400 are a product manufactured by NTE. We provide cost-effective solutions for 1N5400, ensuring timely deliveries around the world.

1N5400 NTE

1N5400 electronic component of NTE
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See Product Specifications
Part No.1N5400
Manufacturer: NTE
Category: Unclassified
Description: STANDARD DIODE, 3A, 50V, DO-27
Datasheet: 1N5400 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
250: USD 0.2166 ea
Line Total: USD 54.15 
Availability - 2798
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 250  Multiples: 1
Pack Size: 1
Availability Price Quantity
2798
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 250
Multiples : 1
250 : USD 0.2166
2500 : USD 0.168
5000 : USD 0.1603
7500 : USD 0.1555
25000 : USD 0.1488
50000 : USD 0.1466
100000 : USD 0.1443
150000 : USD 0.1421

   
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
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We are delighted to provide the 1N5400 from our NTE manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5400 and other electronic components in the NTE manufacturer and beyond.

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1I5400 thru 1N5408 Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp, DO201AD Features: 3 Amp Operation at T = +75C with no Thermal Runaway A High Current Capability Low Leakage Absolute Maximum Ratings: (T = +25C unless otherwise specified, Note 1) A Peak Repetitive Reverse Voltage, V RRM DC Reverse Voltage, V R 1N5400 ..................................................................... 50V 1N5401 .................................................................... 100V 1N5402 .................................................................... 200V 1N5403 .................................................................... 300V 1N5404 .................................................................... 400V 1N5405 .................................................................... 500V 1N5406 .................................................................... 600V 1N5407 .................................................................... 800V 1N5408 ................................................................... 1000V Maximum RMS Voltage 1N5400 ..................................................................... 35V 1N5401 ..................................................................... 70V 1N5402 .................................................................... 140V 1N5403 .................................................................... 210V 1N5404 .................................................................... 280V 1N5405 .................................................................... 350V 1N5406 .................................................................... 420V 1N5407 .................................................................... 560V 1N5408 .................................................................... 700V Average Rectified Current (.375 Lead Length, T = +75C), I ............................ 3A A O Peak Forward Surge Current, I F(surge) (Superimposed on a Rated Load, 8.3ms Single Half Sine Wave) .................. 200A Total Device Dissipation, P ....................................................... 6.25W D Derate Above +25C ..................................................... 50mW/C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toAmbient, R .................................. +20C/W thJA Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Current I Rated DC Voltage T = +25C 5.0 A R A T = +100C 500 A A Maximum Forward Voltage V i = 3A 1.2 V F F Average Reverse Current I Full Cycle, T = +105C 0.5 mA R(AV) A Junction Capacitance V = 4V, f = 1MHz 30 pF R 1.000 (25.4) .375 (9.5) Min Max .052 (1.32) Dia Max .210 (5.33) Dia Max Color Band Denotes Cathode

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