X-On Electronics has gained recognition as a prominent supplier of 2N4400 across the USA, India, Europe, Australia, and various other global locations. 2N4400 are a product manufactured by NTE. We provide cost-effective solutions for 2N4400, ensuring timely deliveries around the world.

2N4400 NTE

2N4400 electronic component of NTE
2N4400 NTE
2N4400 Unclassified
2N4400

Images are for reference only
See Product Specifications
Part No. 2N4400
Manufacturer: NTE
Category: Unclassified
Description: Trans GP BJT NPN 40V 0.6A 3-Pin TO-92
Datasheet: 2N4400 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
250: USD 0.2153 ea
Line Total: USD 53.82 
Availability - 0
MOQ: 250  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 250
Multiples : 1
250 : USD 0.2153
2500 : USD 0.1671
5000 : USD 0.1593
7500 : USD 0.1545
25000 : USD 0.1479
50000 : USD 0.1457
100000 : USD 0.1435
150000 : USD 0.1413

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 0.4324
10 : USD 0.3397
100 : USD 0.2315
500 : USD 0.1732
1000 : USD 0.1474

   
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
No. Of Pins
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the 2N4400 from our NTE manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N4400 and other electronic components in the NTE manufacturer and beyond.

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2N4400 & 2N4401 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: CollectorEmitter Voltage, V ...................................................... 40V CEO Collector Base Voltage, V ....................................................... 60V CBO EmitterBase Voltage, V .......................................................... 6V EBO Continuous Collector Current, I .................................................. 600mA C Total Device Dissipation (T = +25 C), P ......................................... 625mW A D Derate Above 25 C ..................................................... 5.0mW/ C Total Device Dissipation (T = +25 C), P ............................................ 1.5W C D Derate Above 25 C ...................................................... 12mW/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction to Case, R ..................................... 83.3 C/W thJC Thermal Resistance, Junction to Ambient, R ................................... 200 C/W thJA Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0, Note 1 40 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 0.1mA, I = 0 60 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 0.1mA, I = 0 6 V (BR)EBO E C Collector Cutoff Current I V = 35V, V = 0.4V 0.1 A CEX CE EB Base Cutoff Current I V = 35V, V = 0.4V 0.1 A BEV CE EB ON Characteristics (Note 1) DC Current Gain h FE 2N4401 V = 1V, I = 0.1mA 20 CE C 2N4400 V = 1V, I = 1mA 20 CE C 2N4401 40 2N4400 V = 1V, I = 10mA 40 CE C 2N4401 80 2N4400 V = 1V, I = 150mA 50 150 CE C 2N4401 100 300 2N4400 V = 2V, I = 500mA 20 CE C 2N4401 40 Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Contd) (Note 1) CollectorEmitter Saturation Voltage V I = 150mA, I = 15mA 0.4 V CE(sat) C B I = 500mA, I = 50mA 0.75 V C B BaseEmitter Saturation Voltage V I = 150mA, I = 15mA 0.75 0.95 V BE(sat) C B I = 500mA, I = 50mA 1.2 V C B SmallSignal Characteristics Current GainBandwidth Product f T 2N4400 I = 20mA, V = 10V, f = 100MHz 200 MHz C CE 2N4401 250 MHz CollectorBase Capacitance C V = 5V, I = 0, f = 100kHz 6.5 pF cb CB E EmitterBase Capacitance C V = 0.5V, I = 0, f = 100kHz 30 pF eb BE C Input Impedance h ie 2N4400 I = 1mA, V = 10V, f = 1kHz 0.5 7.5 k C CE 2N4401 1.0 15 k 4 Voltage Feedback Ratio h I = 1mA, V = 10V, f = 1kHz 0.1 8.0 x 10 re C CE SmallSignal Current Gain h fe 2N4400 I = 1mA, V = 10V, f = 1kHz 20 250 C CE 2N4401 40 500 Output Admittance h I = 1mA, V = 10V, f = 1kHz 1.0 30 mhos oe C CE Switching Characteristics Delay Time t 15 ns V = 30V, V = 2V, I = 150mA, d CC EB C I = 15mA B1 Rise Time t 20 ns r Storage Time t V = 30V, I = 150mA, 225 ns s CC C I = I = 15mA B1 B2 Fall Time t 30 ns f Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

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