X-On Electronics has gained recognition as a prominent supplier of 2N4400 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N4400 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N4400 Central Semiconductor

2N4400 electronic component of Central Semiconductor
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See Product Specifications
Part No.2N4400
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 60Vcbo 40Vceo 6.0Vebo 600mA 625mW
Datasheet: 2N4400 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2607 ea
Line Total: USD 0.26 
Availability - 3716
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3716
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2607
10 : USD 0.2585
100 : USD 0.1815
1000 : USD 0.1177
2500 : USD 0.1001
10000 : USD 0.0913
25000 : USD 0.0869
50000 : USD 0.0869
100000 : USD 0.0869

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N4400 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N4400 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N4400 2N4401 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C) 2N4400 2N4401 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =35V, V=0.4V - 100 - 100 nA CEV CE EB BV I=0.1mA 60 - 60 - V CBO C BV I=1.0mA 40 - 40 - V CEO C BV I=0.1mA 6.0 - 6.0 - V EBO E V I =150mA, I=15mA - 0.40 - 0.40 V CE(SAT) C B V I =500mA, I=50mA - 0.75 - 0.75 V CE(SAT) C B V I =150mA, I=15mA 0.75 0.95 0.75 0.95 V BE(SAT) C B V I =500mA, I=50mA - 1.2 - 1.2 V BE(SAT) C B h V =1.0V, I=0.1mA - - 20 - FE CE C h V =1.0V, I=1.0mA 20 - 40 - FE CE C h V =1.0V, I=10mA 40 - 80 - FE CE C h V =1.0V, I=150mA 50 150 100 300 FE CE C h V =2.0V, I=500mA 20 - 40 - FE CE C h V =10V, I =1.0mA, f=1.0kHz 20 250 40 500 fe CE C f V =10V, I =20mA, f=100MHz 200 - 250 - MHz T CE C C V =5.0V, I =0, f=100kHz - 6.5 - 6.5 pF ob CB E C V =0.5V, I =0, f=100kHz - 30 - 30 pF ib BE C t V =30V, V =2.0V, I=150mA, on CC EB(OFF) C I=15mA - 35 - 35 ns B1 t V =30V, I =150mA, I =I=15mA - 255 - 255 ns off CC C B1 B2 R2 (2-December 2014)2N4400 2N4401 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (2-December 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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