X-On Electronics has gained recognition as a prominent supplier of 2N3905 across the USA, India, Europe, Australia, and various other global locations. 2N3905 are a product manufactured by NTE. We provide cost-effective solutions for 2N3905, ensuring timely deliveries around the world.

2N3905 NTE

2N3905 electronic component of NTE
2N3905 NTE
2N3905 Unclassified
2N3905

Images are for reference only
See Product Specifications
Part No. 2N3905
Manufacturer: NTE
Category: Unclassified
Description: TRANSISTOR, PNP, -40V
Datasheet: 2N3905 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
11: USD 0.2306 ea
Line Total: USD 2.54 
Availability - 0
MOQ: 11  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ : 11
Multiples : 1
11 : USD 0.2306
250 : USD 0.2097
2500 : USD 0.1627
5000 : USD 0.1552
7500 : USD 0.1506
25000 : USD 0.1441
50000 : USD 0.1419
100000 : USD 0.1397

0
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ : 5
Multiples : 1
5 : USD 0.4946
10 : USD 0.3864
100 : USD 0.3056
500 : USD 0.2423
1000 : USD 0.2015
2500 : USD 0.1617

   
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
No. Of Pins
LoadingGif
 
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We are delighted to provide the 2N3905 from our NTE manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3905 and other electronic components in the NTE manufacturer and beyond.

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NTE159 Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP) Absolute Maximum Ratings: Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO Collector-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CBO Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA C Total Device Dissipation (T = 25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C stg Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3 C/W JC Thermal Resistance, Junction to Ambient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 C/W JA Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com plementary pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage V I = 10mA, I = 0, Note 2 80 - - V (BR)CEO C B Collector-Base Breakdown Voltage V I = 10A, I = 0 80 - - V (BR)CBO C E Emitter-Base Breakdown Voltage V I = 10A, I = 0 5 - - V (BR)EBO E C Collector Cutoff Current I V = 50V, I = 0 - - 50 nA CBO CB E V = 50V, I = 0, T = +75C - - 5 A CB E A Emitter Cutoff Current I - - 100 nA EBO ON Characteristics (Note 2) DC Current Gain h V = 10V, I = 100A 25 - - FE CE C V = 10V, I = 1mA 40 - - CE C V = 10V, I = 10mA 50 - 250 CE C V = 10V, I = 100mA 40 - - CE C V = 10V, I = 500mA 30 - - CE C Collector-Emitter Saturation Voltage V I = 150mA, I = 15mA - - 0.15 V CE(sat) C B I = 500mA, I = 50mA - - 0.5 V C B Base-Emitter Saturation Voltage V I = 150mA, I = 15mA - - 0.9 V BE(sat) C B I = 500mA, I = 50mA - - 1.1 V C B Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Cont d): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance C V = 20V, I = 0, f = 1MHz - - 30 pF ob CB E Input Capacitance Ci V = 500mV, f = 1MHz - - 110 pF b BE Small-Signal Current Gain h I = 500mA, V = 10V, f = 100MHz 1 - 5 fe C CE Noise Figure NF I = 100mA, V = 10V, R = 1k, - - 3 dB C CE S f = 1kHz, B = 1Hz W Switching Characteristics Turn-On Time t V = 30V, I = 500mA, - - 100 ns on CC C I = I = 50mA B1 B2 Turn-Off Time t - - 400 ns off .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

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