2N4126 NTE

2N4125 & 2N4126 Silicon PNP Transistor Audio Amplifier, Switch TO92 Type Package Absolute Maximum Ratings: CollectorEmitter Voltage, V CEO 2N4125 ..................................................................... 30V 2N4126 ..................................................................... 25V Collector Base Voltage, V CBO 2N4125 ..................................................................... 30V 2N4126 ..................................................................... 25V EmitterBase Voltage, V .......................................................... 4V EBO Continuous Collector Current, I .................................................. 200mA C Total Device Dissipation (T = +25 C), P ......................................... 625mW A D Derate Above 25 C ....................................................... 5mW/ C Total Device Dissipation (T = +25 C), P ............................................ 1.5W C D Derate Above 25 C ...................................................... 12mW/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction to Case, R ..................................... 83.3 C/W thJC Thermal Resistance, Junction to Ambient, R ................................... 200 C/W thJA Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V (BR)CEO 2N4125 I = 1mA, I = 0, Note 1 30 V C E 2N4126 25 V CollectorBase Breakdown Voltage V (BR)CBO 2N4125 I = 10 A, I = 0 30 V C E 2N4126 25 V EmitterBase Breakdown Voltage V I = 10 A, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 20V, I = 0 50 nA CBO CB E Base Cutoff Current I V = 3V, I = 0 50 nA BL BE C ON Characteristics (Note 1) DC Current Gain h FE 2N4125 V = 1V, I = 2mA 50 150 CE C 2N4126 120 360 2N4125 V = 1V, I = 50mA 25 CE C 2N4126 60 Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2%.Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Contd) (Note 1) CollectorEmitter Saturation Voltage V I = 50mA, I = 5mA 0.4 V CE(sat) C B BaseEmitter Saturation Voltage V I = 50mA, I = 5mA 0.95 V BE(sat) C B SmallSignal Characteristics Current GainBandwidth Product f T 2N4125 I = 10mA, V = 20V, f = 100MHz 200 MHz C CE 2N4126 250 MHz Input Capacitance C V = 0.5V, I = 0, f = 100kHz 10 pF ibo BE C CollectorBase Capacitance C I = 0, V = 5V, f = 1MHz 4.5 pF cb E CB SmallSignal Current Gain h fe 2N4125 I = 2mA, V = 10V, f = 1kHz 50 200 C CE 2N4126 120 480 Current Gain High Frequency h fe 2N4125 I = 10mA, V = 20V, f = 100MHz 2.0 C CE 2N4126 2.5 Noise Figure NF I = 100 A, V = 5V, R = 1k , C CE S 2N4125 Noise Bandwidth = 10Hz to 15.7kHz 5.0 db 2N4126 4.0 db Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.