X-On Electronics has gained recognition as a prominent supplier of IRF350 MOSFET across the USA, India, Europe, Australia, and various other global locations. IRF350 MOSFET are a product manufactured by NTE. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRF350 NTE

IRF350 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.IRF350
Manufacturer: NTE
Category: MOSFET
Description: MOSFET N-Channel - Enhancement Mode - High Speed Switch - 400V - 14A - TO-3.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 39.4621 ea
Line Total: USD 39.46

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 39.149
10 : USD 24.6052
25 : USD 22.9666
50 : USD 22.3709
100 : USD 21.5312

   
Manufacturer
Product Category
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We are delighted to provide the IRF350 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF350 and other electronic components in the MOSFET category and beyond.

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Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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