X-On Electronics has gained recognition as a prominent supplier of MJ10012 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. MJ10012 Darlington Transistors are a product manufactured by NTE. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

MJ10012 NTE

MJ10012 electronic component of NTE
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Part No.MJ10012
Manufacturer: NTE
Category: Darlington Transistors
Description: Bipolar (BJT) Single Transistor - NPN - 500 V - 175 W - 10 A - 300 hFE.
Datasheet: MJ10012 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.1274 ea
Line Total: USD 11.13 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 12.8483
25 : USD 10.1261
50 : USD 9.9734
100 : USD 9.808
250 : USD 8.9684
500 : USD 8.8158
1000 : USD 8.6885
2500 : USD 8.256

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 15.3422
5 : USD 12.0823
10 : USD 10.0184
50 : USD 9.0047
100 : USD 8.1943
250 : USD 8.0703

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 11.1274
3 : USD 9.2325
6 : USD 8.7338

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Collector Emitter Saturation Voltage Vceon
Current Ic Continuous A Max
Hfe Min
Operating Temperature Min
Operating Temperature Range
Termination Type
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the MJ10012 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJ10012 and other electronic components in the Darlington Transistors category and beyond.

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MJ10012 NPN Silicon Power Darlington Transistor TO3 Type Package Description: The MJ10012 is high voltage, high current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications. Features: Collector Emitter Sustaining Voltage: V = 400Vdc (Min) CEO(sus) 175 Watts Capability at 50 Volts Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 400V CEO CollectorEmitter Voltage (R = 27 ), V ......................................... 550V BE CER Collector Base Voltage, V ...................................................... 600V CBO EmitterBase Voltage, V .......................................................... 8V EBO Collector Current, I C Continuous .................................................................. 10A Peak (Note 1) ................................................................ 15A Base Current, I .................................................................... 2A B Total Power Dissipation, P D T = +25 C ................................................................ 175W C T = +100 C ............................................................... 100W C Derate Above 25 C .................................................... 1.0W/ C Operating Junction Temperature Range, T .................................. 65 to +200 C J Storage Temperature Range, T .......................................... 65 to +200 C stg Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Lead Temperature (During Soldering, 1/8 from case, 5 sec), T ....................... +275 C L Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, V = 400V 400 V CEO(sus) C B clamp V I = 200mA, R = 27 , V = 400V 425 V CER(sus) C BE clamp Collector Cutoff Current I V = 550V, R = 27 1.0 mA CER CER BE I V = 600V, I = 0 1.0 mA CBO CBO E Emitter Cutoff Current I V = 6V, I = 0 40 mA EBO EB C ON Characteristics (Note 3) DC Current Gain h V = 6V, I = 3A 300 550 FE CE C V = 6V, I = 6A 100 350 2000 CE C V = 6V, I = 10A 20 150 CE C CollectorEmitter Saturation Voltage V I = 3A, I = 600mA 1.5 V CE(sat) C B I = 6A, I = 600mA 2.0 V C B I = 10A, I = 2A 2.5 V C B BaseEmitter Saturation Voltage V I = 6A, I = 600mA 2.5 V BE(sat) C B I = 10A, I = 2A 3.0 V C B BaseEmitter ON Voltage V I = 10A, V = 6V 2.8 V BE(on) C CE Diode Forward Voltage V I = 10A 2.0 3.5 V F F Dynamic Characteristics Output Capacitance C V = 10V, I = 0, f = 100kHz 165 350 pF ob CB E test Switching Characteristics Storage Time t V = 12V, I = 6A, I = I = 300mA 7.5 15 s s CC C B1 B2 Fall Time t 5.2 15 s f Functional Tests Pulsed Energy Test I 2 /2 180 mJ C L Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. C B 1k 30 E

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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