MMBT2907A NTE

NTE2407 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA C Total Device Dissipation (FR5 Board, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW D Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/C Thermal Resistance, JunctiontoAmbient (FR5 Board, Note 1), R . . . . . . . . . . . . . . 556C/W thJA Total Device Dissipation (Alumina Substrate, Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW D Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/C Thermal Resistance, JunctiontoAmbient (Alumina Substrate, Note 2), R . . . . . . . . 417C/W thJA Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. FR5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm). Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorBase Breakdown Voltage V I = 10 A, I = 0 60 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 10mA, I = 0, Note 3 60 V (BR)CEO C B EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 50V, I = 0 0.01 A CBO CB E V = 50V, I = 0, T = +125C 10 A CB E A I V = 30V, V = 0.5V 50 nA CEX CE EB(off) Base Current I V = 30V, V = 0.5V 50 nA B CE EB(off) Note 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 3) DC Current Gain h V = 10V, I = 0.1mA 35 FE CE C V = 10V, I = 1mA 50 CE C V = 10V, I = 10mA 100 CE C V = 10V, I = 150mA 100 300 CE C V = 10V, I = 500mA 50 CE C CollectorEmitter Saturation Voltage V I = 150mA, I = 15mA 0.4 V CE(sat) C B I = 500mA, I = 50mA 1.6 V C B BaseEmitter Saturation Voltage V I = 150mA, I = 15mA 1.3 V BE(sat) C B I = 500mA, I = 50mA 2.6 V C B SmallSignal Characteristics Current GainBandwidth Product f I = 50mA, V = 20V, 300 MHz T C CE f = 100MHz, Note 3 Output Capacitance C V = 10V, I = 0, f = 1MHz 8 pF obo CB E Input Capacitance C V = 2V, I = 0, f = 1MHz 30 pF ibo EB C Switching Characteristics TurnOn Time t V = 30V, I = 150mA, 45 ns on CC C I = 15mA B1 Delay Time t 10 ns d Rise Time t 40 ns r TurnOn Time t V = 6V, I = 150mA, 100 ns off CC C I = I = 15mA B1 B2 Delay Time t 80 ns s Rise Time t 30 ns f Note 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. .016 (0.48) C .098 (2.5) Max B E .037 (0.95) .074 (1.9) .051 .118 (3.0) Max (1.3) .043 (1.1) .007 (0.2)