MPSA64 Silicon PNP Transistor Darlington Amplifier Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 30V CES Collector Base Voltage, V ...................................................... 30V CBO EmitterBase Voltage, V ........................................................ 10V EBO Continuous Collector Current, I ................................................... 1.2A C Total Device Dissipation (T = 25C), P .......................................... 625mW A D Derate Above 25 C ....................................................... 5mW/ C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toCase, R .................................... 83.3 C/W thJC Thermal Resistance, Junction toAmbient, R .................................. 200 C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100A, I = 0 30 V (BR)CES C B Collector Cutoff Current I V = 30V, I = 0 100 nA CBO CB E Emitter Cutoff Current I V = 10V, I = 0 100 nA EBO EB C ON Characteristics (Note 1) DC Current Gain h V = 5.0V, I = 10mA 10,000 FE CE C V = 5.0V, I = 100mA 20,000 CE C CollectorEmitter Saturation Voltage V I = 100mA, I = 0.1mA 1.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 100mA, V = 5.0V 2.0 V BE(sat) C CE Small Signal Characteristics Current Gain Bandwidth Product f I = -10mA, V = -5.0V, f = 100MHz 125 MHz t C CE Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%..135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max