MPSA92 & MPSA93 Silicon PNP Transistors High Voltage, General Purpose Amplifier TO92 Type Package Absolute Maximum Ratings: (Note 1) CollectorEmitter Voltage, V CEO MPSA93 ................................................................... 200V MPSA92 ................................................................... 300V Collector Base Voltage, V O CB MPSA93 ................................................................... 200V MPSA92 ................................................................... 300V EmitterBase Voltage, V .......................................................... 5V EBO Continuous Collector Current, I .................................................. 500mA C Total Device Dissipation T = +25C, P ........................................ 625mW A D Derate Above +25 C ...................................................... 5mW/ C Total Device Dissipation T = +25C, P ........................................... 1.5W C D Derate Above +25 C ..................................................... 12mW/ C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toAmbient, R ................................. 200 C/mW thJA Thermal Resistance, Junction toCase, R .................................. 83.3 C/mW thJC Note 1. Stresses exceeding Absolute Maximum ratings may damage the device. Absolute Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage MPSA92 I = 1mA, I = 0, Note 2 V 300 V C B (BR)CEO MPSA93 200 V CollectorBase Breakdown Voltage MPSA92 V I = 100A, I = 0 300 V C E (BR)CBO MPSA93 200 V EmitterBase Breakdown Voltage V I = 100A, I = 0 5 V (BR)EBO E C Collector Cutoff Current MPSA92 V = 200V, I = 0 I 0.25 A CB E CBO MPSA93 V = 160V, I = 0 0.25 A CB E Emitter Cutoff Current I V = 3V, I = 0 0.1 A EBO EB C Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 2) DC Current Gain h I = 1mA, V = 10V 25 FE C CE I = 10mA, V = 10V 40 C CE I = 30mA, V = 10V 25 C CE CollectorEmitter Saturation Voltage MPSA92 V I = 20mA, I = 2mA 0.5 V C B CE(sat) MPSA93 0.4 V BaseEmitter Saturation Voltage V I = 20mA, I = 2mA 0.9 V BE(sat) C B SmallSignal Characteristics Current Gain Bandwidth Product f I = 10mA, V = 20V, f = 100MHz 50 MHz T C CE CollectorBase Capacitance MPSA92 C V = 20V, I = 0, f = 1MHz 6 pF CB E cb MPSA93 8 pF Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max