NTE112 Silicon Small Signal Schottky Diode Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications. Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V RRM Forward Continuous Current (T = +25 C, Note 1), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA A F Surge Non-Repetitive Forward Current (t 1s, Note 1), I . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA p FSM Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150 C stg Thermal Resistance, Junction-to-Ambient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . 400 C/W th (j- a) Maximum Lead Temperature (During soldering, 4mm from case, 10s max), T . . . . . . . . . . +230 C L Note 1. On infinite heatsink with 4mm lead length. Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Breakdown Voltage V I = 100A 5 - - V (BR) R Forward Voltage Drop V I = 10mA, Note 2 - - 0.55 V F F Reverse Current I V = 1V, Note 2 - - 0.05 A R R Dynamic Characteristics Capacitance C V = 0V, f = 1MHz - - 1 pF R Stored Charge Q I = 10mA, Note 3 - - 3 pC S F Frequency F f = 1GHz, Note 4 - 6 7 dB Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle < 2%. Note 3. Measured on a B-line Electronics QS-3 stored charge meter. Note 4. Noise Figure Test: - Diode is inserted in a tuned stripline circuit. Local oscillator frequency 1GHz Local oscillator power 1mW Intermediate frequency amplifier, tuned on 30MHz, has a noise figure, 1.5dB.1.000 (25.4) Min .200 (5.08) Max .022 (.509) Dia Max .090 (2.28) Dia Max Color Band Denotes Cathode