NTE3043 NTE

NTE3043 Optoisolator NPN Transistor Output Description: The NTE3043 is an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 4Lead DIP type package. Features: High Output Voltage: V = 80V (BR)CEO Controlled Current Transfer Ratio Maximum Specified Switching Times High Isolation Voltage Low Cost DIP Type Package Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Input LED DC Forward Current, I F Continuous 60mA Peak (1 s p.w. 300pps) 3A DC Reverse Voltage, V . 3V R Power Dissipation, P 90mW D Derate Above 25C . 1.2mW/C Output Transistor CollectorEmitter Voltage, V 80V CEO EmitterBase Voltage, V 5V EBO CollectorBase Voltage, V 100V CBO Power Dissipation, P . 200mW D Derate Above 25C 2.67mW/C Coupled Power Dissipation, P . 260mW D Derate Above 25C . 3.5mW/C Operating Temperature Range, T 55 to +100C opr Storage Temperature Range, T 55 to +150C stg Lead Temperature (During Soldering, 1/16 from case, 10sec), T . +260C LElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input LED Reverse Leakage Current I V = 3V 10 A R R Forward Voltage V I = 20mA 1.5 V F F Reverse Breakdown Voltage V I = 10 A 3.0 V R R Forward Voltage Temperature Coefficient 1.8 mV/C Junction Capacitance C V = 0, f = 1MHz 50 pF J F V = 1V, f = 1MHz 65 pF F Output Transistor CollectorEmitter Breakdown Voltage V I = 1mA, I = 0 80 V (BR)CEO C F EmitterBase Breakdown Voltage V I = 100 A, I = 0 5 V (BR)EBO E F CollectorBase Breakdown Voltage V I = 10 A 100 V (BR)CBO C CollectorEmitter Dark Current I V = 10V, I = 0 60 nA CEO CE F DC Current Gain h V = 6V, I = 100 A 170 FE CE C CollectorEmitter Capacitance V = 0, f = 1MHz 8 pF CE CollectorBase Capacitance V = 5V, f = 1MHz 20 pF CE EmitterBase Capacitance V = 0, f = 1MHz 10 pF EB Coupled DC Current Transfer Ratio I /I I = 10mA, V = 10V 70 125 210 % C F F CE I = 16mA, V = 0.4V 12.5 % F CE Current Transfer Ratio, CollectorBase I = 10mA, V = 10V 0.15 % F CB InputOutput Isolation Resistance R V = 500V 10 IO ISO DC CollectorEmitter Saturation Voltage V I = 16mA, I = 2mA 0.4 V CE(sat) F C InputOutput Capacitance C f = 1MHz 0.5 pF IO Surge Isolation Relative Humidity < 50%, 4000 V DC I 0 < 10 b 1 t = 1sec 3000 V AC Steady State Isolation Relative Humidity < 50% 3500 V DC t = 1min 2500 V AC Switching Times NonSaturated TurnOn Time t R = 100, I = 200mA, V = 5V 4.5 15 s on L C CC NonSaturated TurnOff Time t 3.5 15 s off Saturated TurnOn Time t R = 1.9k , I = 16mA 3.2 s on L F Saturated TurnOff Time t 50 s off