NTE3083 Optoisolator NPN Darlington Transistor Output Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo darlington in a 6Lead DIP type package. Features: High Sensitivity: 1mA on the Input will Sink a TTL gate 12 High Isolation: 3550VDC, 10 , 0.5pF Absolute Maximum Ratings: Storage Temperature Range, T 65 to +150C stg Operating Temperature Range, T 55 to +100C opr Lead Temperature (During Soldering, 10sec), T +260C L Total Power Dissipation (T = +25C), P 250mW A D Derate Linearly to 100C 3.3mW/C Input to Output Isolation Voltage (1sec), V 3550VDC ISOL Input Diode Forward Current, I . 60mA F Reverse Voltage, V . 3V R Peak Forward Current (1 s pulse, 300pps), I peak 3A F Output Darlington CollectorEmitter Voltage, V 30V CEO CollectorBase Voltage, V . 30V CBO EmitterBase Voltage, V 6V EBO Collector Current, I . 125mA C ElectroOptical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Isolation Between Emitter and Detector Capacitance C f = 1MHz 0.5 pF iso 11 12 Resistance R V = 500VDC 10 10 iso Voltage Breakdown V t = 1sec 3550 VDC isoElectroOptical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Emitter (GaAs LED) Forward Voltage V I = 20mA 1.15 1.50 V F F Reverse Voltage V I = 10 A 3.0 25.0 V R R Junction Capacitance C V = 0V 50 pF J R Detector (Silicon PhotoDarlington) Collector Breakdown Voltage V I = 1mA 30 60 V (BR)CEO C Base Breakdown Voltage V I = 10 A 30 60 V (BR)CBO C Emitter Breakdown Voltage V I = 10 A 6 8 V (BR)EBO E Collector Leakage Current I V = 10V 1 100 nA CEO CE Saturation Voltage V I = 2mA, I = 1mA 0.8 1.0 V CE(sat) C F I = 10mA, I = 5mA 0.8 1.0 V C F I = 50mA, I = 10mA 0.9 1.2 V C F Base PhotoCurrent I V = 5V, I = 10mA 2 A B CB F Darlington Gain h I = 1 A, V = 1V 50k FE B CE CollectorEmitter Capacitance C V = 10V 6 pF CE CE Switching Times, Coupled Rise Time, Fall Time t , t V = 10V, I = 10mA, R = 100 80 s r f CC C L TTL Gate TurnOn Time t I = 1mA 200 s ON F TTL Gate TurnOff Time t I = 1mA 400 s OFF F DC Collector Current Transfer CTR I = 10mA, V = 5V 200 400 % F CE Ratio 6 54 .260 (6.6) Max 12 3 Anode 1 6 Base .070 (1.78) Max 2 5 Cathode Collector .350 (8.89) .300 (7.62) Max N.C. 3 4 Emitter .200 (5.08) .350 Max (8.89) Max .085 (2.16) Max .100 (2.54)