NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp, TO66 Description: The NTE5511 thru NTE5513 all diffused, three junction, silicon controlled rectifiers (SCRs) are in- tended for use in power control and power switching applications. These devices are available in a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating of 5A (rms value) at a case temperature of +75C. Features: Designed Especially for HighVolume Systems DirectSoldered Internal Construction Assures Exceptional Resistance to Fatigue Readily Adaptable for PC Boards and Metal Symmetrical GateCathode Construction Pro- Heat Sinks vides Uniform Current Density, Rapid Electrical Low Switching Losses Conduction, and Efficient Heat Dissipation High di/dt and dv/dt Capabilities AllWelded Construction and Hermetic Sealing Shorted Emitter GateCathode Construction Low Leakage Currents, Forward and Reverse Forward and Reverse Gate Dissipation Ratings Low Forward Voltage Drop at High Current Levels AllDiffused Construction Assures Exceptional Uniformity and Stability of Characteristics Low Thermal Resistance Absolute Maximum Ratings: (For Operation with Sinusoidal AC Supply Voltage at a Frequency between 50Hz and 400Hz, and with Resistive or Inductive Load) Transient Peak Reverse Voltage (Non Repetitive), V (nonrep) RM NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Peak Reverse Voltage (Repetitive), V (rep) RM NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Peak Forward Blocking Voltage (Repetitive), V (rep) FBOM NTE5511 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5512 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5513 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Average DC Forward Current, I F(av) (T = +75C mounted on heat sink, conduction angle or 180) . . . . . . . . . . . . . . . . . . . . 3.2A C RMS Forward Current (T = +75C mounted on heat sink), I . . . . . . . . . . . . . . . . . . . . . . . . . 5A C FRMS Peak Surge Current (For one cycle of applied voltage), i . . . . . . . . . . . . . . . . . . . . . . . . . 60A FM(surge) 2 2 Sub Cycle Surge (NonRepetitive, for a period of 1ms to 8.3ms), I t . . . . . . . . . . . . . . . . . . 15A sec Rate of Change of Forward Current (Note 1), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/s Gate Power (Peak, Forward, or Reverse, for 10s duration, Note 2), P . . . . . . . . . . . . . . . . 13W GM Average Gate Power (Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW GAV Operating Case Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Note 1. V = v (min value), I = 200mA, 0.5s rise time FB BOO GT Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is permissible.Electrical Characteristics: (At Maximum Ratings, T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Forward Breakover Voltage v T = +100C BOO C NTE5511 200 V NTE5512 400 V NTE5513 600 V Peak Blocking Forward Current I FBOM NTE5511 V = 200V T = +100C 0.10 1.5 mA FBO C NTE5512 V = 400V 0.20 3.0 mA FBO NTE5513 V = 600V 0.40 4.0 mA FBO Peak Blocking Reverse Current I RBOM NTE5511 V = 200V T = +100C 0.05 0.75 mA RBO C NTE5512 V = 400V 0.10 1.5 mA RBO NTE5513 V = 600V 0.20 2.0 mA RBO Forward Voltage Drop v I = 30A 2.15 2.80 V F F DC GateTrigger Current I 8 15 mA GT DC GateTrigger Voltage V 1.2 2.0 V GT Holding Current I 10 20 mA Hold Critical Rate of Applied Forward Voltage dv/dt V = v (min), exponential rise, 10 200 V/s FB BOO T = +100C C TurnOn Time t V = v (min), i = 4.5A, 0.75 1.5 s on FB BOO F (Delay Time + Rise Time) I = 200mA, 0.1s rise time GT TurnOff Time t i = 2A, 50s pulse width, 15 50 s off F (Reverse Recovery Time + Gate dv /dt = 20V/s, di /dt = 30A/s, FB r Recovery Time) I = 200mA, T = +75C GT C Thermal Resistance, JunctiontoCase R 4 C/W JC .485 (12.3) .295 (7.5) Dia .062 (1.57) .031 (0.78) Dia .360 (9.14) Min .960 (24.3) Gate .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Anode/Case Cathode