NTE5693/NTE5695/NTE5697 NTE56022/NTE56024/NTE56026 TRIAC, 40 Amp Description: This NTE 40 Amp series medium power TRIACs are bi directional triode thyristors which may be switched from off state to conduction for either polarity of applied voltage with positive or negative gate triggering. These devices are designed for control of AC loads in applications such as lighting, heating and motor speed control, as well as static switching relays. These devices are available in a standard TO48 package (NTE5693, NTE5695, and NTE5697) or an Isolated TO48 package NTE56022, NTE56024, and NTE56026). Absolute Maximum Ratings: Repetitive Peak OffState Voltage (T = +100 C), V J DRM NTE5693, NTE56022 ........................................................ 200V NTE5695, NTE56024 ........................................................ 400V NTE5697, NTE56026 ........................................................ 600V Repetitive Peak Reverse Voltage (T = +100 C), V J RRM NTE5693, NTE56022 ........................................................ 200V NTE5695, NTE56024 ........................................................ 400V NTE5697, NTE56026 ........................................................ 600V RMS OnState Current (T = +75 C, 360 Continuous), I .......................... 40A C T(RMS) Peak Surge (Non Repetitive) On State Current, I TSM OneCycle, 60Hz ........................................................... 400A OneCycle, 50Hz ........................................................... 350A Peak GateTrigger Current (3 s Max), I ........................................... 12A GTM Peak Gate Power Dissipation (I I for 3 s Max), P ........................... 40W GT GTM GM Average Gate Power Dissipation, P .......................................... 750mW G(AV) Operating Junction Temperature Range, T ................................. 40 to +100 C opr NTE56026 ONLY ................................................... 65 to +110 C Storage Temperature Range, T .......................................... 40 to +150 C stg NTE56026 ONLY ................................................... 65 to +150 C Thermal Resistance, Junction toCase, R thJC NTE5693, NTE5695, NTE5697 ............................................ 1.8 C/W NTE56022, NTE56024 .................................................... 2.1 C/W NTE56026 ................................................................ 1 C/W Rev. 614Electrical Characteristics: (At Maximum Ratings and Indicated Case Temperatures unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I T = +100 C, Gate Open, 4 mA DROM J V = Max Rating DROM Maximum OnState Voltage V T = +25 C, I = 100A (Peak) 2.5 V T C T DC Holding Current I T = +25 C, Gate Open 60 mA HOLD C Critical rateofRise of OffState Critical T = +100 C, At V , C DROM Voltage dv/dt Gate Open NTE5693, NTE56022 200 V/ s NTE5695, NTE56024 150 V/ s NTE5697, NTE56026 100 V/ s Critical RateofRise of Commutation Commutating T = +75 C, Gate Unenergized, 3 V/ s C v Voltage dv/dt D = V , T = I , DROM T(RMS) Commutating di/dt = 16A/ms v DC GateTrigger Current I T = +25 C, D = 12VDC, GT C (T +, Gate+ T , Gate) Quads III R = 30 50 mA 2 2 L (T +, Gate T , Gate+) Quads IIIV 80 mA 2 2 v DC GateTrigger Voltage V T = +25 C, D = 12VDC, 2.5 V GT C R = 30 L v GateControlled TurnOn Time t T = +25 C, D = V , 3 s gt C DROM I = 300mA, t = 0.1 s, GT r i T = 10A (Peak) NTE5693, NTE5695, NTE5697 NTE56022, NTE56024, NTE56026 .562 .562 (14.28) (14.28) Max Max Gate MT 1 MT 1 MT 2 Gate .1.193 (30.33) 1.260 Max (32.0) Max .595 (15.1) Max .200 (5.08) Max .453 .445 (111.5) (11.3) MT 1/428 UNF2A 2 Max Max (Isolated Stud) 1/428 UNF2A