NTE56033 TRIAC, 45 Amp Features: Blocking Voltage of 600V GlassPassivated Chip Gate Triggering Guaranteed in Four Modes Excellent Thermal Impedance and High Reliability Construction Absolute Maximum Ratings: Peak Repetitive OffState Voltage (1/2 Sine Wave 6.3 s), V . . . . . . . . . . . . . . . . . . . . . . . . 600V DRM OnState RMS Current (T = +60C, 360 Conduction Angle), I (RMS) . . . . . . . . . . . . . . . . . . . 40A C T Peak NonRepetitive Surge Current (+25 < T initial < +110C, One Full Cycle), I J TSM 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420A 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A 2 2 Circuit Fusing (t = 10ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800A s Peak Gate Current (t = 10 s, Note 1), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A GM Peak Gate Voltage (t = 10 s, Note 1), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V GM Peak Gate Power (t = 10 s, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W GM Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W G(AV) Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +110C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, Contact (with Grease), R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2C/W thCH Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33C/W thJC(DC) Thermal Resistance, JunctiontoCase (F = 50Hz, 360 Conduction Angle), R . . . . 1C/W thJC(AC) Note 1. For either polarity of gate voltage with reference to MT . 1 Note 2. For either polarity of MT voltage with reference to MT . 2 1Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward Blocking Current I T = +110C, V = 600V, Gate Open, Note 2 0.75 4.0 mA DRM J D Gate Trigger Current I GT Quadrant I, II, III 1 50 mA V = 12V, R = 33 , Pulse Duration > 20 s, D L Note 1 Quadrant IV 1 75 mA Gate Trigger Voltage V V = 12V, R = 33 , Pulse Duration > 20 s, 2.5 V GT D L Note 1 Gate NonTrigger Voltage V V = 600V, T = +110C, R = 3k, 0.2 V GD D J L Pulse Duration > 20 s, Note 1 Holding Current I V = 12V, I = 1A, Gate Open, Note 2 30 80 mA H D T Peak OnState Voltage V I = 60A, t = 10ms, Note 2 1.6 V TM TM p Gate Controlled TurnOn Time t V = 600V, I = 40A, I = 1A, 2.5 s gt D TM G di /dt = 10A/ s, Note 1 G Critical Rate of Rise of dv/dt V = 600V, Gate Open, T = +110C, Note 2 50 150 V/ s D J OffState Voltage Critical Rate of Rise of dv/dt(c) V = 600V, I = 40A, T = +60C 5 V/ s D TM C Commutation Voltage Commutating di/dt = 18A/ms, Note 2 Note 1. For either polarity of gate voltage with reference to MT . 1 Note 2. For either polarity of MT voltage with reference to MT . 2 1 .600 (15.24) .060 (1.52) .173 (4.4) MT 2 .156 .550 (3.96) (13.97) .430 Dia. (10.92) MT MT Gate 1 2 .500 (12.7) Min .055 (1.4) .015 (0.39) .215 (5.45) NOTE: Dotted line indicates that case may have square corners.