NTE56058 thru NTE56060 TRIAC, 16A Description: The NTE56058 through NTE56060 are glass passivated TRIACs in an isolated fullpack type package designed for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. Absolute Maximum Ratings: Repetitive Peak OffSate Voltage, V DRM NTE56058 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V NTE56059 (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS OnState Current (Full Sine Wave, T 38C), I (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A HS T NonRepetitive Peak OnState Current, I TSM (Full Sine Wave, T = +125C prior to Surge, with Reapplied V max) J DRM t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A 2 2 2 I t for Fusing (t = 10ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A sec Repetitive RateofRise of OnState Current after Triggering, dI /dt T (I = 20A, I = 0.2A, dI /dt = 0.2A/ s) TM G G MT (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ s 2 MT (+), G () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ s 2 MT (), G () . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/ s 2 MT (), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A/ s 2 Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GM Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Average Gate Power (Over Any 20ms Period), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, JunctiontoHeatsink (Full or Half Cycle), R thJHS With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W Typical Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W thJA Note 1. Although not recommended, offstate voltages up to 800V may be applied without damage, but the TRIAC may switch to the onstate. The rateofrise of current should not exceed 15A/ s.Electrical Characteristics: (T = +25C unless otherwise specfied) J Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Gate Trigger Current MT (+), G (+) I V = 12V, I = 0.1A 5 35 mA 2 GT D T MT (+), G () 8 35 mA 2 MT (), G () 10 35 mA 2 MT (), G (+) 22 70 mA 2 Latching Current MT (+), G (+) I V = 12V, I = 0.1A 7 40 mA 2 L D T MT (+), G () 20 60 mA 2 MT (), G () 8 40 mA 2 MT (), G (+) 10 60 mA 2 Holding Current I V = 12V, I = 0.1A 6 30 mA H D T OnState Voltage V I = 20A 1.2 1.6 V T T Gate Trigger Voltage V V = 12V, I = 0.1A 0.7 1.5 V GT D T V = 400V, I = 0.1A, T = +125C 0.25 0.4 V D T J OffState Leakage Current I V = V max, T = +125C 0.1 0.5 mA D D DRM J Dynamic Characteristics Critical RateofRise of dV /dt V = 67% V max, T = +125C, 100 250 V/ s D DM DRM J OffState Voltage Exponential Waveform, Gate Open Critical RateofChange of dV /dt V = 400V, T = +95C, I RMS = 16A, 20 V/ s com DM J T Commutating Voltage dI /dt = 7.2A/ms, Gate Open com Gate Controlled TurnOn Time t I = 20A, V = V max, I = 0.1A, 2 s gt TM D DRM G dI /dt = 5A/ s G Isolation Characteristics RMS Isolation Voltage from All V R.H. 65%, Clean and Dustfree 1500 V ISOL 3 Pins to External Heatsink Capacitance from T2 to C f = 1MHz 12 pF ISOL External Heatsink .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) .122 (3.1) Max Dia .295 (7.5) .669 .165 (17.0) (4.2) Max MT MT G 1 2 .531 (13.5) Min .100 (2.54) .059 (1.5) Max