NTE56063 & NTE56064 TRIAC, 8A, High Commutation Description: The NTE56063 and NTE56064 are glass passivated, high commutation TRIACs in an isolated full pack type package designed for use in motor control circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. Absolute Maximum Ratings: Repetitive Peak OffSate Voltage (Note 1), V DRM NTE56063 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56064 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS OnState Current (Full Sine Wave, T 73C), I (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A HS T NonRepetitive Peak OnState Current, I TSM (Full Sine Wave, T = +25C prior to Surge) J t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71A 2 2 2 I t for Fusing (t = 10ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21A sec Repetitive RateofRise of OnState Current after Triggering, dI /dt T (I = 20A, I = 0.2A, dI /dt = 0.2A/ s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/ s TM G G Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GM Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Average Gate Power (Over Any 20ms Period), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, JunctiontoHeatsink (Full or Half Cycle), R thJHS With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5K/W Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5K/W Typical Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W thJA Note 1. Although not recommended, offstate voltages up to 800V may be applied without damage, but the TRIAC may switch to the onstate. The rateofrise of current should not exceed 6A/ s.Electrical Characteristics: (T = +25C unless otherwise specfied) J Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Gate Trigger Current MT (+), G (+) I V = 12V, I = 0.1A, Note 2 2 18 50 mA 2 GT D T MT (+), G () 2 21 50 mA 2 MT (), G () 2 34 50 mA 2 Latching Current MT (+), G (+) I V = 12V, I = 0.1A 31 60 mA 2 L D T MT (+), G () 34 90 mA 2 MT (), G () 30 60 mA 2 Holding Current I V = 12V, I = 0.1A 31 60 mA H D T OnState Voltage V I = 10A 1.3 1.65 V T T Gate Trigger Voltage V V = 12V, I = 0.1A 0.7 1.5 V GT D T V = 400V, I = 0.1A, T = +125C 0.25 0.4 V D T J OffState Leakage Current I V = V max, T = +125C 0.1 0.5 mA D D DRM J Dynamic Characteristics Critical RateofRise of dV /dt V = 67% V max, T = +125C, 1000 4000 V/ s D DM DRM J OffState Voltage Exponential Waveform, Gate Open Critical RateofChange of dI /dt V = 400V, T = +95C, I RMS = 8A, 14 A/ms com DM J T Commutating Current without Snubber, Gate Open Gate Controlled TurnOn Time t I = 12A, V = V max, I = 0.1A, 2 s gt TM D DRM G dI /dt = 5A/ s G Isolation Characteristics RMS Isolation Voltage from All V f = 50 60Hz, Sinusoidal Waveform, 2500 V ISOL 3 Pins to External Heatsink R.H. 65%, Clean and Dustfree Capacitance from T2 to C f = 1MHz 10 pF ISOL External Heatsink Note 2. Device does not trigger in the MT (), G (+) quadrant. 2 .181 (4.6) Max .126 (3.2) Dia Max .405 (10.3) .114 (2.9) Max Isol .252 (6.4) .622 (15.0) Max MT 2 .118 (3.0) Max .531 (13.5) Min MT G 1 .098 (2.5) .100 (2.54)