NTE56070 & NTE56071 TRIAC, 25A, High Commutation Description: The NTE56070 and NTE56071 are glass passivated, high commutation TRIACs in a TO220 type package designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. Absolute Maximum Ratings: Repetitive Peak OffSate Voltage (Note 1), V DRM NTE56070 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56071 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS OnState Current (Full Sine Wave, T 91C), I (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 25A MB T NonRepetitive Peak OnState Current, I TSM (Full Sine Wave, T = +25C prior to Surge) J t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209A 2 2 2 I t for Fusing (t = 10ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A sec Repetitive RateofRise of OnState Current after Triggering, dI /dt T (I = 30A, I = 0.2A, dI /dt = 0.2A/ s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/ s TM G G Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GM Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Average Gate Power (Over Any 20ms Period), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, JunctiontoMounting Base, R thJMB Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0K/W Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4K/W Typical Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W thJA Note 1. Although not recommended, offstate voltages up to 800V may be applied without damage, but the TRIAC may switch to the onstate. The rateofrise of current should not exceed 15A/ s.Electrical Characteristics: (T = +25C unless otherwise specfied) J Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Gate Trigger Current MT (+), G (+) I V = 12V, I = 0.1A, Note 2 2 18 50 mA 2 GT D T MT (+), G () 2 21 50 mA 2 MT (), G () 2 34 50 mA 2 Latching Current MT (+), G (+) I V = 12V, I = 0.1A 31 60 mA 2 L D T MT (+), G () 34 90 mA 2 MT (), G () 30 60 mA 2 Holding Current I V = 12V, I = 0.1A 31 60 mA H D T OnState Voltage V I = 30A 1.3 1.55 V T T Gate Trigger Voltage V V = 12V, I = 0.1A 0.7 1.5 V GT D T V = 400V, I = 0.1A, T = +125C 0.25 0.4 V D T J OffState Leakage Current I V = V max, T = +125C 0.1 0.5 mA D D DRM J Dynamic Characteristics Critical RateofRise of dV /dt V = 67% V max, T = +125C, 1000 4000 V/ s D DM DRM J OffState Voltage Exponential Waveform, Gate Open Critical RateofChange of dI /dt V = 400V, T = +125C, I RMS = 25A, 44 A/ms com DM J T Commutating Current without Snubber, Gate Open Gate Controlled TurnOn Time t I = 12A, V = V max, I = 0.1A, 2 s gt TM D DRM G dI /dt = 5A/ s G Note 2. Device does not trigger in the MT (), G (+) quadrant. 2 .420 (10.67) Max .110 (2.79) MT 2 .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT Gate 1 .100 (2.54) MT 2