NTE5620 TRIAC 800V , 8A, TO220 Full Pack RM The NTE5620 TRIAC is designed primarily for fullwave AC control applications, such as light dim- mers, heater controls, motor controls, and power supplies or wherever full wave silicon gate con- trolled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied voltage with positive or negative gate triggering. Features: Blocking Voltage 800 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability Gate Triggering Guaranteed in Four Modes Absolute Maximum Ratings: Peak Repetitive OffState Voltage, V DRM (T = 40 to +125C, 1/2 Sine Wave 50 to 60H , Gate Open, Note 1) .............. 800V J Z OnState Current RMS, I T(RMS) (T = +80C, Full Cycle Sine Wave 50 to 60H , Note 2 ) ............................ 8A C Z Peak Non Repetitive Surge Current, I TSM (One Full Cycle, 60Hz, T = +125C, Preceded and followed by rated current) ...... 100A C Peak Gate Power (T = +80C, Pulse Width = 2 s), P ............................... 16W C GM Average Gate Power (T = +80C, t = 8.3ms), P ............................... 350mW C G(AV) Peak Gate Current (Pulse Width = 2 s), I ............................................ 4A GM RMS Isolation Voltage (T = +25C, Relative Humidity 20%), V ................... 1500V A (ISO) Operating Junction Temperature Range, T .................................. 40 to +125C J Storage Temperature Range, T .......................................... 40 to +150C stg Thermal Resistance, Junction toCase, R ..................................... 2.2 C/W thJC Typical Thermal Resistance, Case toSink, R .................................. 2.2 C/W thCS Thermal Resistance, Junction toAmbient, R ................................... 60 C/W thJA Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. Note 2. The case temperature reference point for all T measurements is a point on the center C lead of the package as close as possible to the plastic body. Rev. 416Electrical Characteristics: (T = +25 C unless otherwise specified) C Characteristics Symbol Min Typ Max Unit Peak Blocking Current (Either Direction) I 2 mA DRM (Rated V , T = +125C, Gate Open) DRM J Peak OnState Voltage (Either Direction) V 1.7 2.0 V TM (I = 11.3A Peak Pulse Width = 1 to 2ms, TM Duty Cycle < 2%) Peak Gate Trigger Current I mA GT (Main Terminal Voltage = 12Vdc, R = 100 Ohms) L MT2(+), G(+) 50 MT2(+), G() 50 MT2(), G() 50 MT2(), G(+) 75 Peak Gate Trigger Voltage V V GT (Main Terminal Voltage = 12Vdc, R = 100 Ohms) L MT2(+), G(+) 0.9 2.0 MT2(+), G() 0.9 2.0 MT2(), G() 1.1 2.0 MT2(), G(+) 1.4 2.5 (Main Terminal Voltage = Rated V , R = 10k, DRM L T = +125C) J MT2(+), G(+) MT2(+), G() MT2(), G() 0.2 MT2(), G(+) 0.2 Holding Current (Either Direction) I 50 mA H (Main Terminal Voltage = 24Vdc, Gate Open I = 200mA) T Critical Rate of Rise of OffState Voltage dv/dt 100 V/s (Rated V , Exponential Waveform, T = +125C, DRM J Gate Open) Critical Rate of Rise of Commutation Voltage dv/dt(c) 5 V/s (Rated V , I = 6A, Commutating di/dt = 4.3A/ms, DRM T(RMS) Gate Unenergized, T = +80 C) C