NTE5608 thru NTE5610 TRIAC 8 Amp Description: The NTE5608 through NTE5610 series of TRIACs are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Repetitive Peak OffState Voltage (T = 40 to +125C, R = 1k ), V J GK DRM NTE5608 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5609 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V OnState Current (All Conduction Angles, T = +85C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A C T(RMS) NonRepetitive OnState Current (Half Cycle), I TSM 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77A 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A 2 2 Fusing Current (t = 10ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A s Peak Gate Current (t = 10 s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A GM Peak Gate Dissipation (t = 10 s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W GM Gate Dissipation (t = 20ms Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W G(AV) Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W thJA Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T . . . . . . . . . . . . . . . +250C L Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OffState Leakage Current I V = V , R = 1k , T = +25C 5 A DRM D DRM GK J V = V , R = 1k , T = +125C 2 mA D DRM GK J OnState Voltage V I = 12A, T = +25C 1.85 V T T J OnState Threshold Voltage V T = +125C 1 V T(TO) J OnState Slope Resistance r T = +125C 80 m T JElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Current I V = 12V, Note 1 10 mA GT D Gate Trigger Voltage V V = 12V, All Quadrants 2.5 V GT D Holding Current I R = 1k 10 mA H GK Critical RateofRise dv/dt V = 0.67 x V , R = 1k , T = +125C 50 V/ s D DRM GK J Critical RateofRise, OffState dv/dt I = 8A, di/dt = 3.55A/ms, T = +85C 2 V/ s c T C Note 1. For either polarity of gate voltage with reference to electrode MT . 1 .420 (10.67) Max .110 (2.79) MT 2 .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT Gate 1 .100 (2.54) MT 2