X-On Electronics has gained recognition as a prominent supplier of NTE5656 Triacs across the USA, India, Europe, Australia, and various other global locations. NTE5656 Triacs are a product manufactured by NTE. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

NTE5656 NTE

NTE5656 electronic component of NTE
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See Product Specifications
Part No.NTE5656
Manufacturer: NTE
Category: Triacs
Description: Thyristor TRIAC 400V 8A 3-Pin TO-92
Datasheet: NTE5656 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
180: USD 0.1119 ea
Line Total: USD 20.14 
Availability - 174
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 180  Multiples: 1
Pack Size: 1
Availability Price Quantity
174
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 180
Multiples : 1
180 : USD 0.1119

   
Manufacturer
Product Category
Brand
Peak Repetitive Off-State Voltage Vdrm
On State Rms Current Itrms
Triac Case Style
Gate Trigger Current Max Qi Igt
Gate Trigger Voltage Max Vgt
Peak Gate Power
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE5656 from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE5656 and other electronic components in the Triacs category and beyond.

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NTE5655 thru NTE5657 TRIAC 800mA Sensitive Gate Description: The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS devices. These TRIACs feature voidfree glass passivated chips. These NTE devices are bidirectional triode thyristors and may be switched from offstate to conduc- tion for either polarity of applied voltage with positive or negative gate trigger current. They are de- signed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Gate Open, T = +100C), V J DRM NTE5655 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5656 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5657 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS OnState Current (T = +75C, Conduction Angle of 360C), I . . . . . . . . . . . . . . . 800mA C TRMS Peak Surge (NonRepetitive) OnState Current (One Cycle, 50Hz or 60Hz), I . . . . . . . . . . . 8A TSM Peak GateTrigger Current (3 s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA GTM Peak GatePower Dissipation (I I for 3 s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Average GatePower Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW G(AV) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W thJC Electrical Characteristics: (T = +25C, Maximum Ratings unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I V = Max Rating, Gate Open, 0.75 mA DRM DRM T = +100C J Max. OnState Voltage V i = 800mA (Peak) 1.9 V TM T DC Holding Current I Gate Open 15 mA H Critical RateofRise of OffState Voltage Critical V = V , Gate Open, T = +100C 10 V/ s D DRM C dv/dtElectrical Characteristics (Contd): (T = +25C, Maximum Ratings unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DC Gate Trigger Current I V = 6V, R = 100 5 mA GT D L T (+) Gate (+), T () Gate () 2 2 T (+) Gate (), T () Gate (+) 2 2 DC Gate Trigger Voltage V V = 6V, R = 100 2.2 V GT D L GateControlled TurnOn Time t V = V , I = 80mA, t = 0.1 s, 2.2 s gt D DRM GT r i = 10A (Peak) T .135 (3.45) Min .210 Seating (5.33) Plane Max .500 .021 (.445) Dia Max (12.7) Min MT MT 1 2 Gate .100 (2.54) .050 (1.27) .105 (2.67) Max .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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