NTE5655 thru NTE5657 TRIAC 800mA Sensitive Gate Description: The NTE5655 through NTE5657 are 800mA sensitive gate TRIACs in a TO92 type package designed to be driven directly with IC and MOS devices. These TRIACs feature voidfree glass passivated chips. These NTE devices are bidirectional triode thyristors and may be switched from offstate to conduc- tion for either polarity of applied voltage with positive or negative gate trigger current. They are de- signed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Gate Open, T = +100C), V J DRM NTE5655 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5656 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5657 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS OnState Current (T = +75C, Conduction Angle of 360C), I . . . . . . . . . . . . . . . 800mA C TRMS Peak Surge (NonRepetitive) OnState Current (One Cycle, 50Hz or 60Hz), I . . . . . . . . . . . 8A TSM Peak GateTrigger Current (3 s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA GTM Peak GatePower Dissipation (I I for 3 s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Average GatePower Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW G(AV) Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Typical Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W thJC Electrical Characteristics: (T = +25C, Maximum Ratings unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I V = Max Rating, Gate Open, 0.75 mA DRM DRM T = +100C J Max. OnState Voltage V i = 800mA (Peak) 1.9 V TM T DC Holding Current I Gate Open 15 mA H Critical RateofRise of OffState Voltage Critical V = V , Gate Open, T = +100C 10 V/ s D DRM C dv/dtElectrical Characteristics (Contd): (T = +25C, Maximum Ratings unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DC Gate Trigger Current I V = 6V, R = 100 5 mA GT D L T (+) Gate (+), T () Gate () 2 2 T (+) Gate (), T () Gate (+) 2 2 DC Gate Trigger Voltage V V = 6V, R = 100 2.2 V GT D L GateControlled TurnOn Time t V = V , I = 80mA, t = 0.1 s, 2.2 s gt D DRM GT r i = 10A (Peak) T .135 (3.45) Min .210 Seating (5.33) Plane Max .500 .021 (.445) Dia Max (12.7) Min MT MT 1 2 Gate .100 (2.54) .050 (1.27) .105 (2.67) Max .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max
