X-On Electronics has gained recognition as a prominent supplier of TYN625RG SCRs across the USA, India, Europe, Australia, and various other global locations. TYN625RG SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

TYN625RG STMicroelectronics

TYN625RG electronic component of STMicroelectronics
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See Product Specifications
Part No.TYN625RG
Manufacturer: STMicroelectronics
Category: SCRs
Description: Thyristor; 600V; 16A; 25A; 40mA; Package: tube; THT; TO220AB
Datasheet: TYN625RG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4581 ea
Line Total: USD 1.46 
Availability - 485
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4649
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 45
Multiples : 1
45 : USD 1.458
50 : USD 1.3

485
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 1.4581
10 : USD 1.2427
30 : USD 1.1245
100 : USD 0.9914
500 : USD 0.9315
1000 : USD 0.9053

112
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 2.604
3 : USD 2.422
10 : USD 1.904
25 : USD 1.792

4649
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 6
Multiples : 1
6 : USD 1.3

2525
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 6
Multiples : 1
6 : USD 2.5019

960
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 23
Multiples : 1
23 : USD 1.7713

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TYN625RG from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TYN625RG and other electronic components in the SCRs category and beyond.

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TN2540, TXN625, TYN625, TYN825, TYN1225 Standard 25 A SCRs Datasheet - production data Features A On-state rms current, I 25 A T(RMS) Repetitive peak off-state voltage, V /V DRM RRM 600 to 1200 V G Triggering gate current, I 40 mA GT K Insulated package TO-220AB ins A Insulating voltage 2500 V rms UL1557 certified (file ref. E81734) A Description G K TO-220AB These standard 25 A SCRs are suitable for A general purpose applications. G A K DPAK Using clip assembly technology, they provide a G superior performance in surge current capabilities. TXN625RG is packaged in TO-220AB ins. K TO-220AB Insulated A G Table 1. Device summary Voltage V /V DRM RRM Sensitivity Order code Package I GT 600 V 800 V 1200 V 2 TN2540-600G-TR Y 40 mA D PAK 2 TN2540-800G-TR Y 40 mA D PAK TXN625RG Y 40 mA TO-220AB ins TYN625RG Y 40 mA TO-220AB TYN825RG Y 40 mA TO-220AB TYN1225RG Y 40 mA TO-220AB August 2014 DocID7478 Rev 9 1/11 This is information on a product in full production. www.st.comCharacteristics TN2540, TXN625, TYN625, TYN825, TYN1225 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-220AB, T = 100 C 2 c D PAK I On-state rms current (180 Conduction angle) 25 A T(RMS) TO-220AB ins T = 83 C c I Average on-state current (180 Conduction angle) T = 100 C 16 A T(AV) c t = 8.3 ms 314 p I Non repetitive surge peak on-state current T = 25 C A TSM j t = 10 ms 300 p 2 2 2 ItI t Value for fusing t = 10 ms T = 25 C 450 A S p j Critical rate of rise of on-state current dI/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j V Maximum peak reverse gate voltage 5 V RGM Table 3. Electrical Characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Value Unit MIN. 4 I mA GT V = 12 V R = 33 MAX. 40 D L V MAX. 1.3 V GT V V = V R = 3.3 k T = 125 C MIN. 0.2 V GD D DRM L j I I = 500 mA Gate open MAX. 50 mA H T I I = 1.2 x I MAX. 90 mA L G GT dV/dt V = 67% V Gate open T = 125 C MIN. 1500 V/s D DRM j V I = 50 A tp = 380 s T = 25 C MAX. 1.6 V TM TM j V Threshold voltage T = 125 C MAX. 0.77 V t0 j R Dynamic resistance T = 125 C MAX. 14 m d j T = 25 C 5A I j DRM V = V MAX. DRM RRM I RRM T = 125 C 4 mA j 2/11 DocID7478 Rev 9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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