X-On Electronics has gained recognition as a prominent supplier of TYN816RG SCRs across the USA, India, Europe, Australia, and various other global locations. TYN816RG SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

TYN816RG STMicroelectronics

TYN816RG electronic component of STMicroelectronics
TYN816RG STMicroelectronics
TYN816RG SCRs
TYN816RG  Semiconductors

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See Product Specifications
Part No. TYN816RG
Manufacturer: STMicroelectronics
Category: SCRs
Description: Thyristor; 800V; 10A; 16A; 25mA; Package: tube; THT; TO220AB
Datasheet: TYN816RG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
88: USD 0.7414 ea
Line Total: USD 65.24 
Availability - 713
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ: 88  Multiples: 1
Pack Size: 1
Availability Price Quantity
12
Ship by Tue. 18 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 1.1215
10 : USD 1.0337
30 : USD 0.8389
100 : USD 0.7119
500 : USD 0.692
1000 : USD 0.6836

204
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 1.638
10 : USD 1.372
19 : USD 0.966
51 : USD 0.924
500 : USD 0.882

713
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 88
Multiples : 1
88 : USD 0.7414
100 : USD 0.7097
500 : USD 0.6694
1000 : USD 0.613
2500 : USD 0.5666
10000 : USD 0.5589

2910
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 1000
Multiples : 1000
1000 : USD 0.6263
10000 : USD 0.6152

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TYN816RG from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TYN816RG and other electronic components in the SCRs category and beyond.

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TN1625 TYN616, TYN816 16 A standard SCRs Features A I =16 A T(RMS) G V /V = 600 to 1000 V DRM RRM K I = 25 mA GT Description A A The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a K A K superior performance in surge current A G G capabilities. 2 D PAK TO-220AB (TN1625-x00G) (TYNx16RG) Table 1. Device summary TN1625-600G TN1625-1000G Parameter Unit TYN616RG TYN816RG V /V 600 800 1000 V DRM RRM Sensitivity 25 25 25 mA November 2007 Rev 6 1/9 www.st.com 9Characteristics TN1625, TYN616, TYN816 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 Conduction angle) T = 110 C 16 A T(RMS) c I Average on-state current (180 Conduction angle) T = 110 C 10 A T(AV) c t = 8.3 ms 200 p I Non repetitive surge peak on-state current T = 25 C A TSM j t = 10 ms 190 p 2 2 2 ItI t Value for fusing t = 10 ms T = 25 C 180 A S p j Critical rate of rise of on-state current dI/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j V Maximum peak reverse gate voltage 5 V RGM Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test Conditions Value Unit MIN. 2 I mA GT V = 12 V R = 33 MAX. 25 D L V MAX. 1.3 V GT V V = V R = 3.3 k T = 125 C MIN. 0.2 V GD D DRM L j I I = 500 mA Gate open MAX. 40 mA H T I I = 1.2 x I MAX. 60 mA L G GT dV/dt V = 67 % V Gate open T = 125 C MIN. 500 V/s D DRM j V I = 32 A t = 380 s T = 25 C MAX. 1.6 V TM TM p j V Threshold voltage T = 125 C MAX. 0.77 V t0 j R Dynamic resistance T = 125 C MAX. 23 m d j T = 25 C 5A I j DRM V = V MAX. DRM RRM I T = 125 C 2 mA RRM j Table 4. Thermal resistance Symbol Parameter Value Unit R Junction to case (DC) 1.1 C/W th(j-c) 2 2 S = 01 cm D PAK 45 R Junction to ambient (DC) C/W th(j-a) TO-220AB 60 S = copper surface under tab 2/9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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