TYN840RG STMicroelectronics

TYN840RG electronic component of STMicroelectronics
TYN840RG STMicroelectronics
TYN840RG SCRs
TYN840RG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TYN840RG SCRs across the USA, India, Europe, Australia, and various other global locations. TYN840RG SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

Part No. TYN840RG
Manufacturer: STMicroelectronics
Category: SCRs
Description: Thyristor; 800V; 25A; 40A; 35mA; Package: tube; THT; TO220AB
Datasheet: TYN840RG Datasheet (PDF)
Price (USD)
65: USD 4.1311 ea
Line Total: USD 268.52 
Availability : 675
  
Ship by Tue. 23 Sep to Mon. 29 Sep
QtyUnit Price
65$ 4.1311

Availability 94
Ship by Fri. 19 Sep to Tue. 23 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.1856
5$ 4.8822
12$ 4.6222


Availability 675
Ship by Tue. 23 Sep to Mon. 29 Sep
MOQ : 65
Multiples : 1
QtyUnit Price
65$ 4.1311

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TYN840RG from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TYN840RG and other electronic components in the SCRs category and beyond.

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TYN640, TYN840 40 A standard SCRs Datasheet - production data Description A These standard SCRs are suitable for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies, in-rush current limiting circuits, solid state relays (in back to back configuration), welding equipment, high power G motor control circuits. Using clip assembly technology, they provide a K superior performance in high surge current A capabilities. Table 1. Device summary Order code Voltage Sensitivity TYN640RG 600 V 35 mA K A TYN840RG 800 V 35 mA G TO-220AB Features On-state rms current, I 40 A T(RMS): Repetitive peak off-stat voltage, V , V : DRM RRM 600 V 800 V Triggering gate current, I : 35 mA GT November 2013 DocID6944 Rev 6 1/8 This is information on a product in full production. www.st.comCharacteristics TYN640, TYN840 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit I On-state rms current (180 conduction angle) T = 95 C 40 A T(RMS) c IT Average on-state current (180 conduction angle) T = 95 C 25 A (AV) c t = 8.3 ms 480 p Non repetitive surge peak on-state I T = 25 C A TSM j current t = 10 ms 460 p 2 ItI t Value for fusing t = 10 ms T = 25 C 1060 A S p j Critical rate of rise of on-state current T = 125 j dI/dt F = 60 Hz 50 A/s I = 2 x I , t 100 ns C G GT r T = 125 j I Peak gate current t = 20 s 4A GM p C T = 125 j P Average gate power dissipation 1W G(AV) C T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j V Maximum peak reverse gate voltage 5 V RGM Table 3. Electrical Characteristics (T = 25 C, unless otherwise specified) j Symbol Test Conditions Value Unit MIN. 3.5 I mA GT V = 12 V R = 33 MAX. 35 D L V MAX. 1.3 V GT V V = V R = 3.3 k T = 125 C MIN. 0.2 V GD D DRM L j I I = 500 mA Gate open MAX. 75 mA H T I I = 1.2 x I MAX. 150 mA L G GT dV/dt V = 67% V Gate open T = 125 C MIN. 1000 V/s D DRM j V I = 80 A t = 380 s T = 25 C MAX. 1.6 V TM TM p j V Threshold voltage T = 125 C MAX. 0.85 V t0 j R Dynamic resistance T = 125 C MAX. 10 m d j T = 25 C 5A I j DRM V = V MAX. DRM RRM I RRM T = 125 C 4 mA j Table 4. Thermal resistance Symbol Parameter Value Unit R Junction to case (DC) 0.8 C/W th(j-c) R Junction to ambient (DC) 60 C/W th(j-a) 2/8 DocID6944 Rev 6

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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