TPDV825RG STMicroelectronics

TPDVxx25 25 A high voltage Triacs Features A2 On-state current (I ): 25 A T(RMS) Max. blocking voltage (V /V ): 1200 V DRM RRM Gate current (I ): 150 mA GT G Commutation 10 V/s: up to 88 A/ms A1 Noise immunity: 2 kV/s Insulated package: 2,500 V rms (UL recognized: E81734). Description The TPDVxx25 series use high performance A1 A2 alternistor technology. G Featuring very high commutation levels and high TOP3 insulated surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). Table 1. Device summary Parameter TPDV825RG TPDV1025RG TPDV1225RG Blocking voltage V /V 800 V 1000 V 1200 V DRM RRM On-state current I 25 A T(RMS) Gate current I 150 mA GT January 2012 Doc ID 18268 Rev 2 1/7 www.st.com 7Characteristics TPDVxx25 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I On-state rms current (180 conduction angle) T = 85 C 25 A T(RMS) c t = 2.5 ms 390 p Non repetitive surge peak on-state I t = 8.3 ms T = 25 C 250 A TSM p j current t = 10 ms 230 p 2 2 2 ItI t value for fusing t = 10 ms T = 25 C 265 A S p j Critical rate of rise of on-state current dI/dt F = 50 Hz 100 A/s I = 500 mA, dI /dt = 1 A/s G G TPDV825 800 V DRM Repetitive peak off-state voltage TPDV1025 T = 125 C 1000 V j V RRM TPDV1225 1200 Storage junction temperature range - 40 to + 150 T stg C T Operating junction temperature range - 40 to + 125 j (1) V Insulation rms voltage 2500 V INS(RMS) 1. A1, A2, gate terminals to case for 1 minute Table 3. Electrical Characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrant Value Unit I MAX. 150 mA GT V = 12 V DC, R = 33 I - II - III D L V MAX. 1.5 V GT V V = V R = 3.3 k T = 125 C I - II - III MIN. 0.2 V GD D DRM L j t V = V I = 500 mA dI /dt = 3 A/s I - II - III TYP. 2.5 s gt D DRM G G (1) I I = 500 mA Gate open TYP. 50 mA H T I - III 100 I I = 1.2 x I TYP. mA L G GT II 200 dV/dt Linear slope up to: V = 67% V Gate open T = 125 C MIN. 2000 V/s D DRM j (1) V I = 35 A t = 380 s MAX. 1.8 V TM TM p (1) V Threshold voltage T = 125 C MAX. 1.1 V to j (1) R Dynamic resistance T = 125 C MAX. 19 m d j T = 25 C 20 A I j DRM V = V MAX. DRM RRM I RRM T = 125 C 8 mA j (dV/dt)c = 200 V/s 20 (1) (dI/dt)c T = 125 C MIN. A/ms j (dV/dt)c = 10 V/s 88 1. For either polarity of electrode A voltage with reference to electrode A . 2 1 2/7 Doc ID 18268 Rev 2