X-On Electronics has gained recognition as a prominent supplier of TPDV825RG Triacs across the USA, India, Europe, Australia, and various other global locations. TPDV825RG Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

TPDV825RG STMicroelectronics

TPDV825RG electronic component of STMicroelectronics
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See Product Specifications
Part No.TPDV825RG
Manufacturer: STMicroelectronics
Category: Triacs
Description: Thyristor TRIAC 800V 390A 3-Pin(3+Tab) TOP Tube
Datasheet: TPDV825RG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 6.5309 ea
Line Total: USD 195.93 
Availability - 0
MOQ: 30  Multiples: 30
Pack Size: 30
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 14.168
2 : USD 9.282
3 : USD 9.268
5 : USD 8.764

0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 30
Multiples : 30
30 : USD 6.5309

   
Manufacturer
Product Category
Packaging
Gate Trigger Current Max
Gate Trigger Voltage Max
Mounting
Operating Temp Range
Package Type
Peak Surge On-State Current Max
Peak Repeat Off Current
Repetitive Peak Off-State Volt
Pin Count
Type
Off-State Voltage
Operating Temperature Classification
On State Voltage Max
Hold Current
Rad Hardened
Gate Trigger Current
Gate Trigger Voltage
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We are delighted to provide the TPDV825RG from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPDV825RG and other electronic components in the Triacs category and beyond.

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TPDVxx25 25 A high voltage Triacs Features A2 On-state current (I ): 25 A T(RMS) Max. blocking voltage (V /V ): 1200 V DRM RRM Gate current (I ): 150 mA GT G Commutation 10 V/s: up to 88 A/ms A1 Noise immunity: 2 kV/s Insulated package: 2,500 V rms (UL recognized: E81734). Description The TPDVxx25 series use high performance A1 A2 alternistor technology. G Featuring very high commutation levels and high TOP3 insulated surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). Table 1. Device summary Parameter TPDV825RG TPDV1025RG TPDV1225RG Blocking voltage V /V 800 V 1000 V 1200 V DRM RRM On-state current I 25 A T(RMS) Gate current I 150 mA GT January 2012 Doc ID 18268 Rev 2 1/7 www.st.com 7Characteristics TPDVxx25 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I On-state rms current (180 conduction angle) T = 85 C 25 A T(RMS) c t = 2.5 ms 390 p Non repetitive surge peak on-state I t = 8.3 ms T = 25 C 250 A TSM p j current t = 10 ms 230 p 2 2 2 ItI t value for fusing t = 10 ms T = 25 C 265 A S p j Critical rate of rise of on-state current dI/dt F = 50 Hz 100 A/s I = 500 mA, dI /dt = 1 A/s G G TPDV825 800 V DRM Repetitive peak off-state voltage TPDV1025 T = 125 C 1000 V j V RRM TPDV1225 1200 Storage junction temperature range - 40 to + 150 T stg C T Operating junction temperature range - 40 to + 125 j (1) V Insulation rms voltage 2500 V INS(RMS) 1. A1, A2, gate terminals to case for 1 minute Table 3. Electrical Characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrant Value Unit I MAX. 150 mA GT V = 12 V DC, R = 33 I - II - III D L V MAX. 1.5 V GT V V = V R = 3.3 k T = 125 C I - II - III MIN. 0.2 V GD D DRM L j t V = V I = 500 mA dI /dt = 3 A/s I - II - III TYP. 2.5 s gt D DRM G G (1) I I = 500 mA Gate open TYP. 50 mA H T I - III 100 I I = 1.2 x I TYP. mA L G GT II 200 dV/dt Linear slope up to: V = 67% V Gate open T = 125 C MIN. 2000 V/s D DRM j (1) V I = 35 A t = 380 s MAX. 1.8 V TM TM p (1) V Threshold voltage T = 125 C MAX. 1.1 V to j (1) R Dynamic resistance T = 125 C MAX. 19 m d j T = 25 C 20 A I j DRM V = V MAX. DRM RRM I RRM T = 125 C 8 mA j (dV/dt)c = 200 V/s 20 (1) (dI/dt)c T = 125 C MIN. A/ms j (dV/dt)c = 10 V/s 88 1. For either polarity of electrode A voltage with reference to electrode A . 2 1 2/7 Doc ID 18268 Rev 2

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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