TR136 STMicroelectronics

TR136 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 Applications 1 Electronic ballast for fluorescent lighting TO-220 Electronic transformer for halogen lamps Description The device is manufactured using high voltage Figure 1. Internal schematic diagrams Multi Epitaxial Planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Table 1. Device summary Order code Marking Package Packaging TR136 TR136 TO-220 Tube February 2008 Rev 2 1/9 www.st.com 9Electrical ratings TR136 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 3 A C I Collector peak current (t < 5ms) 6 A CM P I Base current 1.5 A B I Base peak current (t < 5ms) 3 A BM P P Total dissipation at T 25C 60 W tot c T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J 2/9