NTE5726 Powerblock Module Description: The NTE5726 uses high voltage power thyristors/diodes and is electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This device is intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required. Features: High Voltage Electrically Isolated Base Plate 3000V Isolating Voltage RMS High Surge Capability Large Creepage Distances Applications: AC/DC Motor Drives Various Rectifiers DC Supply for PWM Inverter Ratings and Characteristics: (T = +125C unless otherwise specified) J Max. Mean OnState Current, I T(AV) (T = +85C, 180 Conduction, Half Sine Wave, 50Hz, Single Side Cooled) . . . . . . . . . 160A C Max. RMS OnState Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360A T(RMS) Max. Repetitive Peak Reverse and Off State Blocking Voltage, V , V DRM RRM (t = 10ms, V & V = V & V +200V Respectively) . . . . . . . . . . . . . . . . . . 1600V p DSM RSM DRM RRM Max. Repetitive Peak Current (At V & V Respectively), I , I . . . . . . . . . . . . . . . 20mA DRM RRM DRM RRM Max. Surge On State Current (V = 60% V , 10ms Half Sine Wave), I . . . . . . . . . . . . 5.4KA R RRM TSM 2 2 2 3 Max. I t fo Fusing Coordination (V = 60% V , 10ms Half Sine Wave), I . . . . . . . 146A s * 10 R RRM t Max. Threshold Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V TO Max. OnState Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.69m T Max. Peak OnState Voltage (I = 480A, T = +25C), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7V TM J TM Max. Critical Rate of Rise of OffState Voltage (V = 67% V ), dv/dt . . . . . . . . . . . . . . 800V/s DM DRM Max. Critical Rate of Rise of OnState Current, di/dt (I = 320A, gate Source 1.5A, t 0.5s Repetitive) . . . . . . . . . . . . . . . . . . . . . . . . . 100A/s TM r Gate Trigger Current (V = 12V, I = 1A, T = +25C), I . . . . . . . . . . . . . . . . . . . . 30mA to 150mA A A J GT Gate Trigger Voltage (V = 12V, I = 1A, T = +25C), V . . . . . . . . . . . . . . . . . . . . . . . 1.0V to 2.5V A A J GT Rev. 1009Ratings and Characteristics (Contd): (T = +125C unless otherwise specified) J Holding Current (V = 12V, I = 1A, T = +25C), I . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA to 150mA A A J H Min. NonTrigger Gate Voltage (V = 67% V ), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2V DRM DRM GD RMS Isolation Voltage (50Hz, t = 1s min., I = 1mA max.), V . . . . . . . . . . . . . . . . . . . . . . 2500V ISO ISO Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, Junction toCase (Single Side Cooled), R . . . . . . . . . . . . . . . . 0.170C/W thJC Thermal Resistance, Case toSink (Single Side Cooled), R . . . . . . . . . . . . . . . . . . . . . 0.08C/W thCS Circuit Diagram G2 K2 AC + K1 G1 K2 G2 + AC K1 G1 .980 (25.0) .980 (25.0) .244 (6.2) Dia (2 Places) 1.340 (34.0) .270 (7.0) 3.150 (80.0) M6 x 1 Screw (3 Places) 1.850 (47.0) 1.180 (30.0) 3.700 (94.0) NOTE: Can be used with Heat Sink NTE441A