X-On Electronics has gained recognition as a prominent supplier of NTE582-4 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. NTE582-4 Diodes - General Purpose, Power, Switching are a product manufactured by NTE. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

NTE582-4 NTE

NTE582-4 electronic component of NTE
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See Product Specifications
Part No.NTE582-4
Manufacturer: NTE
Category: Diodes - General Purpose, Power, Switching
Description: DIODE-SILICON 400V 2A FAST
Datasheet: NTE582-4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 19.167 ea
Line Total: USD 95.84 
Availability - 4
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 5
Multiples : 1
5 : USD 19.167
25 : USD 15.8043
50 : USD 15.5481
100 : USD 14.8276
250 : USD 13.9789
500 : USD 13.5946
1000 : USD 13.2263

   
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Product Category
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We are delighted to provide the NTE582-4 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE582-4 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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NTE5818 thru NTE5825 Silicon Power Rectifier Fast Recovery, 12 Amp, DO4 Description: The NTE5818 through NTE5825 are silicon fast recovery rectifiers in a DO4 type package having a typical recovery time of 150ns providing high efficiency at frequencies to 250kHz. Typical applications include DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. Absolute Maximum Ratings: (Note 1) Peak Repetitive Reverse Voltage, V RRM NTE5818, NTE5819* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5820, NTE5821* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5822, NTE5823* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5824, NTE5825* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Working Peak Reverse Voltage, V RWM NTE5818, NTE5819* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5820, NTE5821* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5822, NTE5823* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5824, NTE5825* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V DC Blocking Voltage, V R NTE5818, NTE5819* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5820, NTE5821* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5822, NTE5823* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5824, NTE5825* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Non Repetitive Peak Reverse Voltage, V RSM NTE5818, NTE5819* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V NTE5820, NTE5821* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V NTE5822, NTE5823* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 660V NTE5824, NTE5825* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V RMS Reverse Voltage, V R(RMS) NTE5818, NTE5819* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V NTE5820, NTE5821* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280V NTE5822, NTE5823* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420V NTE5824, NTE5825* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Average Rectified Forward Current (Single Phase, Resistive Load, T = +100C), I . . . . . . . . 12A C O Non Repetitive Peak Surge Current, I FSM (Surge applied at rated load conditions, One cycle) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0C/W thJC Note 1. Standard polarity is cathode to case, (*) indicated anode to case.Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Instantaneous Forward Voltage v i = 38A, T = +150C 1.2 1.5 V F F J Forward Voltage V I = 12A, T = +25C 1.0 1.4 V F F C Reverse Current I Rated DC Voltage T = +25C 10 25 A R C T = +100C 0.5 3.0 mA C Reverse Recovery Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Reverse Recovery Time t I = 1A to V = 30V 150 200 ns rr F R I = 36A, di/dt = 25A/s 200 400 ns FM Reverse Recovery Current I I = 1A to V = 30V 2 A RM(REC) F R .437 .250 (6.35) Max (11.1) Max .175 (4.45) Max .060 (1.52) Dia Min 1032 NF2A .405 (10.3) .453 .424 (10.8) Max (11.5) Dia Max Max 1.250 (31.75) Max

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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