NTE5824, NTE5826 & NTE58210 Fast Recovery Silicon Diode, 2A DO15 Type Package Features: Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Maximum Ratings and Electrical Characteristics: (T = +25C unless otherwise specified. Single A phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.) Peak Repetitive Reverse Voltage, V RRM NTE5824 ................................................................. 400V NTE5826 ................................................................. 600V NTE58210 ............................................................... 1000V Working Peak Reverse Voltage, V RWM NTE5824 ................................................................. 400V NTE5826 ................................................................. 600V NTE58210 ............................................................... 1000V DC Blocking Voltage, V R NTE5824 ................................................................. 400V NTE5826 ................................................................. 600V NTE58210 ............................................................... 1000V RMS Reverse Voltage, V R(RMS) NTE5824 ................................................................. 280V NTE5826 ................................................................. 420V NTE58210 ................................................................ 700V Average Forward Rectified Current (T = +55C, Note 1), I .............................. 2A A O Non Repetitive Peak Forward Surge Current, I FSM (8.3ms Single half Sine Wave Superimposed on Rated Load) ..................... 60A Forward Voltage (I = 2A), V ...................................................... 1.2V F FM Peak Reverse Current (At rated DC Blocking Voltage), I RM T = +25C .................................................................. 5 A J T = +100C .............................................................. 100 A J Reverse Recovery Time (Note 2), t rr NTE5824 ................................................................ 150ns NTE5826 ................................................................ 250ns NTE58210 ............................................................... 500ns Typical Junction Capacitance (Note 3), C ............................................ 30pF J Note 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. Note 2. Measured at I = 500mA, I = 1A, I = 250mA.. F R RR Note 3. Measured at 1MHz an Applied Reverse Voltage of 4.0VDC.Maximum Ratings and Electrical Characteristics (Contd): (T = +25 C unless otherwise specified. A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.) Thermal Resistance, Junction toAmbient (Note 1), R ........................... 40 C/W thJA Thermal Resistance, Junction toLead (Note 1), R .............................. 20 C/W thJL Operating Junction Temperature Range, T .................................. 65 to +125C J Storage Temperature Range, T .......................................... 65 to +150C stg Note 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. Note 2. Measured at I = 500mA, I = 1A, I = 250mA.. F R RR Note 3. Measured at 1MHz an Applied Reverse Voltage of 4.0VDC. 1.000 .300 (25.4) (7.62) Min Max .034 (.864) Dia Max .142 (3.6) Dia Max Color Band Denotes Cathode