X-On Electronics has gained recognition as a prominent supplier of NTE582-10 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. NTE582-10 Diodes - General Purpose, Power, Switching are a product manufactured by NTE. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

NTE582-10 NTE

NTE582-10 electronic component of NTE
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Part No.NTE582-10
Manufacturer: NTE
Category: Diodes - General Purpose, Power, Switching
Description: DIODE-SILICON 1000V 2A FAS
Datasheet: NTE582-10 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
130: USD 0.8192 ea
Line Total: USD 106.5 
Availability - 0
MOQ: 130  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 130
Multiples : 1
130 : USD 0.8192
200 : USD 0.5624
500 : USD 0.3768
1000 : USD 0.3583

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4168
3 : USD 0.7532
10 : USD 0.6636
38 : USD 0.5381
104 : USD 0.52

   
Manufacturer
Product Category
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We are delighted to provide the NTE582-10 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE582-10 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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NTE5824, NTE5826 & NTE58210 Fast Recovery Silicon Diode, 2A DO15 Type Package Features: Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Maximum Ratings and Electrical Characteristics: (T = +25C unless otherwise specified. Single A phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.) Peak Repetitive Reverse Voltage, V RRM NTE5824 ................................................................. 400V NTE5826 ................................................................. 600V NTE58210 ............................................................... 1000V Working Peak Reverse Voltage, V RWM NTE5824 ................................................................. 400V NTE5826 ................................................................. 600V NTE58210 ............................................................... 1000V DC Blocking Voltage, V R NTE5824 ................................................................. 400V NTE5826 ................................................................. 600V NTE58210 ............................................................... 1000V RMS Reverse Voltage, V R(RMS) NTE5824 ................................................................. 280V NTE5826 ................................................................. 420V NTE58210 ................................................................ 700V Average Forward Rectified Current (T = +55C, Note 1), I .............................. 2A A O Non Repetitive Peak Forward Surge Current, I FSM (8.3ms Single half Sine Wave Superimposed on Rated Load) ..................... 60A Forward Voltage (I = 2A), V ...................................................... 1.2V F FM Peak Reverse Current (At rated DC Blocking Voltage), I RM T = +25C .................................................................. 5 A J T = +100C .............................................................. 100 A J Reverse Recovery Time (Note 2), t rr NTE5824 ................................................................ 150ns NTE5826 ................................................................ 250ns NTE58210 ............................................................... 500ns Typical Junction Capacitance (Note 3), C ............................................ 30pF J Note 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. Note 2. Measured at I = 500mA, I = 1A, I = 250mA.. F R RR Note 3. Measured at 1MHz an Applied Reverse Voltage of 4.0VDC.Maximum Ratings and Electrical Characteristics (Contd): (T = +25 C unless otherwise specified. A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.) Thermal Resistance, Junction toAmbient (Note 1), R ........................... 40 C/W thJA Thermal Resistance, Junction toLead (Note 1), R .............................. 20 C/W thJL Operating Junction Temperature Range, T .................................. 65 to +125C J Storage Temperature Range, T .......................................... 65 to +150C stg Note 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case. Note 2. Measured at I = 500mA, I = 1A, I = 250mA.. F R RR Note 3. Measured at 1MHz an Applied Reverse Voltage of 4.0VDC. 1.000 .300 (25.4) (7.62) Min Max .034 (.864) Dia Max .142 (3.6) Dia Max Color Band Denotes Cathode

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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