NTE6093 Silicon Rectifier Dual, Schottky Barrier 60V, 60 Amp, TO3P Description: The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle with a Molybenum barrier metal. Features: Low Forward Voltage Guard Ring for Stress Protection Low Power Loss & High Efficiency Guarantee Reverse Avalanche +125C Operating Junction Temperature High Surge Capacity Low Storied Charge majority Carrier Conduction Low Switching Noise Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, V . 60V RRM Working Peak Reverse Voltage, V 60V RWM DC Blocking Voltage, V 60V R RMS Reverse Voltage, V 42V R(RMS) Average Rectifier Forward Current (V = 60V, T = +125C), I R C F(AV) Per Diode . 30A Total Device . 60A Peak Repetitive Forward Current (V = 60V, Square Wave, T = +125C), I . 60A R C FM Non Repetitive Peak Surge Current, I FSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) 600A Operating Junction Temperature Range, T 65 to +125C J Storage Temperature Range, T 65 to +125C stgElectrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Instantaneous Forward Voltage V I = 30A, T = +25C 0.63 V F F C I = 30A, T = +125C 0.75 V F C Instantaneous Reverse Current I V = 60V, T = +25C 10 A R R C V = 60V, T = +100C 150 A R C .670 (17.0) Max .197 (5.0) .866 K (22.0) .217 (5.5) .590 .130 (3.3) (15.0) Dia AK A .177 (4.5) .747 (19.0) Min .215 (5.47) .025 (0.65)