NTE7141 Integrated Circuit Dual BIMOS Operational Amplifier w /MOSFET Input, Bipolar Output Description: The NTE7141 is a dual, operational amplifier in an 8Lead MiniDIP type package that combines the advantages of MOS and bipolar transistors on the same monolithic chip. The gateprotected MOS- FET (PMOS) input transistors provide high input impredance and a wide commonmode input volt- age range (typically to 0.5V below the negative supply rail). The bipolar output transistors allow a wide output voltage swing and provide a high output current capability. Features: Internally Compensated MOSFET Input Stage: Very High Input Impedance Very Low Input Current Wide CommonMode Input Voltage Range Rugged Input Stage Bipolar Diode Protected Directly Replaces Industry Type 1458 in Most Applications Operation From 4Vto36V Single or Dual Supplies Characterized for 15V Operation for TTL Supply Systems with Operation down to 4V Wide Bandwidth High VoltageFollower Slew Rate Output Swings to Within 0.5V of Negative Supply at V+ = 5V, V = 0 Applications: GroundReferenced SingleSupply Amplifiers in Automobile and Portable Instrumentation Sample and Hold Amplifiers LongDuration Timers/Multivibrators (Microseconds Minutes Hours) Photocurrent Instrumentation Active Filters Intrusion Alarm Systems Comparators Instrumentation Amplifiers Function Generators Power SuppliesAbsolute Maximum Ratings: DC Supply Voltage (Between V+ and V Terminals) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 to 36V or 2 to 18V DifferentialMode Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V CommonMode DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V+ +8V) to (V 0.5V) InputTerminal Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA Device Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 630mW D Derate Linearly Above +55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/C Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +85C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Lead Temperature (During Soldering, 1/16 from case, 10sec max), T . . . . . . . . . . . . . . . . . +265C L Output ShortCircuit Duration (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Unlimited Note 1. Short circuit may be applied to GND or to either supply. Temperature and/or supply voltages must be limited to keep dissipation within maximum rating. Electrical Characteristics: (V+ = +15V, V = 15V unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Input Offset Voltage V T = +25C 5 15 mV IO A T = 40 to +85C 10 mV A Input Offset Current I T = +25C 0.5 30 pA IO A T = +85C 32 pA A Input Current I T = +25C 10 50 pA I A T = +85C 640 pA A LargeSignal Voltage Gain A Note 2 T = +25C 20k 100k V/V OL A 86 100 dB T = 40 to +85C 63k V/V A 96 dB CommonMode Rejection Ratio CMRR T = +25C 32 320 V/V A 70 90 dB T = 40 to +85C 32 V/V A 90 dB CommonMode InputVoltage V T = +25C 15 15.5 +11 V ICR A to Range +12.5 T = 40 to +85C 15 V A to +12.3 Power Supply Rejection Ratio V / V T = +25C 100 150 V/V IO A PSSR 76 80 dB V / V T = 40 to +85C 150 V/V IO A PSSR 76 dB Note 2. V = 26V , +12V, 14V and R = 2k . O PP L